High energy irradiation effects on AlGaN/GaN HFET devices
G. Sonia1,2, E. Richter1, F. Brunner1, A. Denker3, R. Lossy1, F. Lenk1, J. Opitz-Coutureau3, M. Mai1, J. Schmidt1, U. Zeimer1, L. Wang1, K. Baskar2, M. Weyers1, J. Würfl1 and G. Tränkle1
Published in:
Semicond. Sci. Technol., vol. 22, no. 11, pp. 1220-1224 (2007).
Abstract:
The effect of proton, carbon, oxygen and krypton irradiation on AlGaN HFET devices has been studied. Irradiation was performed at 68 and 120 MeV with fluences in the range from 1 × 107 to 1 × 1013 cm-2. Before and after irradiation, dc and pulsed I-V characteristics, loadpull and S-parameters of the AlGaN HFET devices were measured. A thick GaN reference layer was characterized by x-ray diffraction, photoluminescence and Hall measurements before and after irradiation. Proton, carbon and oxygen irradiation show no degradation in devices while krypton irradiation shows a small change at a fluence of 1 × 1010 cm-2 in the device characteristics. The device results are correlated with the thick GaN results.
1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2 Crystal Growth Centre, Anna University, Chennai-600 025, India
3 Ionenstrahllabor, Hahn-Meitner-Institut, Glienicker Straße 100, 14109 Berlin, Germany
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