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The XML File Format as a General Solution for Measurement Data Storage and Exchange
/forschung/publikationen/the-xml-file-format-as-a-general-solution-for-measurement-data-storage-and-exchange
Based on the open-standard XML language, a file format devoted to measurement data is described. A draft of the file format scheme is established and a set of general rules are proposed for its…
Evaluation of Wafer-Level LRRM and LRM+ Calibration Techniques
/forschung/publikationen/evaluation-of-wafer-level-lrrm-and-lrm-calibration-techniques
This paper presents a comparison of two well-known two-port wafer-level calibration methods, the enhanced linereflect- reflect-match (eLRRM) and the advanced line-reflectmatch (LRM+) approach. Both…
Characterizing Intermodulation Distortion of High-Power Devices
/forschung/publikationen/characterizing-intermodulation-distortion-of-high-power-devices
Modern wireless communication systems demand for high power and broadband devices. There are different technologies emerging offering more and more power density, with single devices delivering power…
Diode-cladding-pumped singly Ho3+-doped silica fibre laser
/forschung/publikationen/diode-cladding-pumped-singly-ho3-doped-silica-fibre-laser
An unsaturated continuous-wave output power of 109 mW was produced from a diode-pumped Ho3+-doped double-clad silica fibre laser that did not require the use of a sensitiser. The laser operated…
Current Switch-off Solution to Protect RF Power Transistors During Measurements
/forschung/publikationen/current-switch-off-solution-to-protect-rf-power-transistors-during-measurements
A new security switch called "e-fuse" is presented here. It acts as a fuse in the bias feed, providing very fast switch-off times, thus protecting the device under test and the measurement…
Detection of terahertz radiation with diode lasers
/forschung/publikationen/detection-of-terahertz-radiation-with-diode-lasers
A standard commercial semiconductor is shown to be able to detect terahertz (THz) radiation at room temperature. A voltage variation across the active region of the device upon incident THz radiation…
Detection of THz radiation with semiconductor diode lasers
/forschung/publikationen/detection-of-thz-radiation-with-semiconductor-diode-lasers
As a consequence of the strong many-body interactions in the electron-hole plasma, a semiconductor laser efficiently interacts with terahertz radiation. The injection of terahertz laser radiation…
Mechanism of LiAlO2 decomposition during the GaN growth on (100) γ-LiAlO2
/forschung/publikationen/mechanism-of-lialo2-decomposition-during-the-gan-growth-on-100nbspg-lialo2
c-plane oriented GaN nucleation layers have been grown on (100) γ-LiAlO2 substrates by hydride vapor phase epitaxy. Longer recrystallization time favors the decomposition of the LiAlO2…
High-Power Picosecond Pulse Generation Due to Mode-Locking With a Monolithic 10-mm-Long Four-Section DBR Laser at 920 nm
/forschung/publikationen/high-power-picosecond-pulse-generation-due-to-mode-locking-with-a-monolithic-10-mm-long-four-section-dbr-laser-at-920-nm
A 10-mm-long four-section distributed Bragg reflector laser with a double-quantum-well heterostructure at 920 nm was realized. A maximum optical pulse power of 3.6 W with a repetition rate…
X-ray diffraction spot mapping - a tool to study structural properties of semiconductor disk laser devices
/forschung/publikationen/x-ray-diffraction-spot-mapping-a-tool-to-study-structural-properties-of-semiconductor-disk-laser-devices
Local lattice plane curvature of semiconductor disk laser devices is determined by an X-ray spot mapping technique using white beam synchrotron radiation. This method allows for in-situ studies of…