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Generation of second harmonic with non-diffraction limited radiation
/forschung/publikationen/generation-of-second-harmonic-with-non-diffraction-limited-radiation
An analytical Gaussian-Schell-model based theory of partial coherent SHG determines the dependence of the frequency conversion on the focussing conditions and the M2 in vertical and lateral…
Wavelength-Stabilized Compact Diode Laser System on a Microoptical Bench With 1.5-W Optical Output Power at 671 nm
/forschung/publikationen/wavelength-stabilized-compact-diode-laser-system-on-a-microoptical-bench-with-15-w-optical-output-power-at-671nbspnm
A wavelength-stabilized compact diode laser system emitting at 671 nm mounted on a microoptical bench with the dimensions of 13mm x 4mm is presented. A reflecting Bragg grating was aligned on…
5-W DBR Tapered Lasers Emitting at 1060 nm With a Narrow Spectral Linewidth and a Nearly Diffraction-Limited Beam Quality
/forschung/publikationen/5-w-dbr-tapered-lasers-emitting-at-1060nbspnm-with-a-narrow-spectral-linewidth-and-a-nearly-diffraction-limited-beam-quality
Distributed Bragg reflector tapered lasers emitting at a wavelength of about 1060 nm were realized. The expitaxial layer structure leads to a vertical far-field angle of 15 (full-width at…
5.6-W Broad-Area Lasers With a Vertical Far-Field Angle of 31° Emitting at 670 nm
/forschung/publikationen/56-w-broad-area-lasers-with-a-vertical-far-field-angle-of-31-emitting-at-670nbspnm
Highly efficient 670-nm high-power broad-area laser diodes with a single InGaP quantum-well embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers are presented. The developed…
GaN HEMT Potential for Low-Noise Highly Linear RF Applications
/forschung/publikationen/gan-hemt-potential-for-low-noise-highly-linear-rf-applications
This paper presents a study of the capability of gallium- nitride (GaN) high-electron mobility transistors (HEMTs) to achieve low noise and high linearity performance. A packaged GaN HEMT was…
Plasma ignition in a quarter-wavelength microwave slot resonator
/forschung/publikationen/plasma-ignition-in-a-quarter-wavelength-microwave-slot-resonator
A new microwave plasma source concept, particularly for use in the atmospheric pressure region, is presented where impedance matching is realized by a quarter-wavelength waveguide resonator…
High-Power Monolithic Two-Mode DFB Laser Diodes for the Generation of THz Radiation
/forschung/publikationen/high-power-monolithic-two-mode-dfb-laser-diodes-for-the-generation-of-thz-radiation
We have devolved 1064 nm high-power monolithic distributed feedback lasers which operate simultaneously on two longitudinal modes. These modes correspond to the fundamental and first-order…
New Two-Color Laser Concepts for THz Generation
/forschung/publikationen/new-two-color-laser-concepts-for-thz-generation
Two-color semiconductor external cavity laser concepts for terahertz (THz) generation are discussed. By defining three critical characteristics, various two-color laser configurations are…
290-fs pulses from a semiconductor disk laser
/forschung/publikationen/290-fs-pulses-from-a-semiconductor-disk-laser
Transform-limited pulses as short as 290 fs at 1036 nm are generated by a diode-pumped semiconductor disk laser. The allsemiconductor laser employs a graded-gap-barrier design in the gain…
Quantitative analysis of in situ wafer bowing measurements for III-nitride growth on sapphire
/forschung/publikationen/quantitative-analysis-of-in-situ-wafer-bowing-measurements-for-iii-nitride-growth-on-sapphire
Wafer bowing measurements have been recently developed into an efficient tool for MOVPE and MBE process optimization. In combination with temperature and reflectance measurements they are applied for…