X-ray diffraction spot mapping - a tool to study structural properties of semiconductor disk laser devices
U. Zeimer1 , J. Grenzer2, D. Korn3, S. Döring3, M. Zorn1, W. Pittroff1, U. Pietsch4, F. Saas5, and M. Weyers1
Published in:
phys. stat. sol. (a), vol. 204, no. 8, pp. 2753-2759 (2007).
Abstract:
Local lattice plane curvature of semiconductor disk laser devices is determined by an X-ray spot mapping technique using white beam synchrotron radiation. This method allows for in-situ studies of the dependence of the lattice plane profile on device temperature and local heating by optical pumping. The influence of different device mounting procedures on the structural and optical device parameters was investigated. This knowledge was used for device technology optimisation.
1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2 Forschungszentrum Rossendorf, Bautzener Landstr. 128, 01328 Dresden, Germany
3 Universität Potsdam, Institut für Physik, Am Neuen Palais 10, 14415 Potsdam, Germany
4 Universität Siegen, FB7 Physik, 57068 Siegen, Germany
5 Max-Born-Institut für nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2a, 12489 Berlin, Germany
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