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3 W-broad area lasers and 12 W-bars with conversion efficiencies up to 40% at 650 nm
/forschung/publikationen/3nbspw-broad-area-lasers-and-12nbspw-bars-with-conversion-efficiencies-up-to-40-at-650nbspnm
650 nm broad area diode lasers with an output power of 3 W and a conversion efficiency of 40% at 15°C are presented. 5 mm wide laser bars reach 12 W output power.
9 W output power from a 808 nm tapered diode laser in pulsed mode operation with nearly diffraction-limited beam quality
/forschung/publikationen/9nbspw-output-power-from-a-808nbspnm-tapered-diode-laser-in-pulsed-mode-operation-with-nearly-diffraction-limited-beam-quality
808 nm tapered diode lasers are fabricated based on a SLOC structure with very small divergence of 18°. 14 W overall output power with 9 W of nearly diffraction-limited beam…
5-W Reliable Operation Over 2000 h of 5-mm-Wide 650-nm AlGaInP-GaInP-AlGaAs Laser Bars With Asymmetric Cladding Layers
/forschung/publikationen/5-w-reliable-operation-over-2000nbsph-of-5-mm-wide-650-nm-algainp-gainp-algaas-laser-bars-with-asymmetric-cladding-layers
Reliable operation of 650-nm laser bars with GaInP quantum wells embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers is reported. The 5-mm-wide bars consisting of ten…
Laser-Assisted Processing of VIAs for AlGaN/GaN HEMTs on SiC Substrates
/forschung/publikationen/laser-assisted-processing-of-vias-for-algangan-hemts-on-sic-substrates
Vertical interconnect accesses (VIAs) were fabricated between the source electrode on the front and the ground on the backside of high-power microwave AlGaN/GaN high-electron mobility transistors…
Gallium nitride powerbar transistors with via holes fabricated by laser ablation
/forschung/publikationen/gallium-nitride-powerbar-transistors-with-via-holes-fabricated-by-laser-ablation
Low ohmic through-hole vias are fabricated for AlGaN/GaN HEMT powerbar devices on SiC substrates using laser ablation technique. A complete processing technique has been developed. Through-wafer…
Thermal properties and degradation behavior of red-emitting high-power diode lasers
/forschung/publikationen/thermal-properties-and-degradation-behavior-of-red-emitting-high-power-diode-lasers
The thermal properties and the degradation behavior of high-power broad-area diode lasers emitting at 650 nm are analyzed. Imaging thermography is applied to assess the bulk temperature while the…
Rapid shifted excitation Raman difference spectroscopy with a distributed feedback diode laser emitting at 785 nm
/forschung/publikationen/rapid-shifted-excitation-raman-difference-spectroscopy-with-a-distributed-feedback-diode-laser-emitting-at-785nbspnm
A distributed feedback (DFB) laser diode emitting at 785 nm was tested and applied as a light source for shifted excitation Raman difference spectroscopy (SERDS). Due to the physical properties…
Mechanism of ohmic contact formation in AlGaN/GaN high electron mobility transistors
/forschung/publikationen/mechanism-of-ohmic-contact-formation-in-algangan-high-electron-mobility-transistors
We tested various ohmic contact metallization schemes on AlGaN/GaN HEMTs to achieve low contact resistance, good surface morphology and proper line edge definition. Mo, Ni and Pt intermediate layers…
Spectral properties of a semiconductor α-DFB laser cavity
/forschung/publikationen/spectral-properties-of-a-semiconductor-a-dfb-laser-cavity
The experimental and theoretical investigations of spectral properties of a semiconductor α-DFB laser cavity are carried out. It is shown that in these lasers the curvature of mode gain spectra…
Passively mode-locked Yb:LuVO4 oscillator
/forschung/publikationen/passively-mode-locked-ybluvo4-oscillator
Passive mode locking of the ytterbium doped orthovanadate crystal Yb:LuVO4 is reported for the first time. We demonstrate what we believe to be the shortest pulses directly generated with an Yb-doped…