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10W continuous-wave monolithically integrated master-oscillator power-amplifier
/forschung/publikationen/10w-continuous-wave-monolithically-integrated-master-oscillator-power-amplifier
A semiconductor-based master-oscillator power-amplifier operating at 977 nm is demonstrated to emit more than 10 W continuous wave in a nearly diffraction limited beam with a narrow spectral…
High-power red laser diodes grown by MOVPE
/forschung/publikationen/high-power-red-laser-diodes-grown-by-movpe
We report on the development of high-power laser diodes and laser bars emitting in the visible red spectral region. In contrast to the normally used epitaxial structure consisting of Al(Ga)InP…
MOVPE growth optimization for laser diodes with highly strained InGaAs MQWs
/forschung/publikationen/movpe-growth-optimization-for-laser-diodes-with-highly-strained-ingaas-mqws
With the aim of realizing high power laser diodes on GaAs with narrow far fields and an emission wavelength above 1100 nm, we have studied the growth and strain behavior of pseudomorphic…
Growth optimization during III-nitride multiwafer MOVPE using real-time curvature, reflectance and true temperature measurements
/forschung/publikationen/growth-optimization-during-iii-nitride-multiwafer-movpe-using-real-time-curvature-reflectance-and-true-temperature-measurements
We employed a newly developed wafer-selective curvature, reflectance and temperature sensor (EpiCurveTT®) in an AIX2600HT Planetary Reactor®. Growth of GaN on sapphire as well as AlGaN and…
AlGaInP growth parameter optimisation during MOVPE for opto-electronic devices
/forschung/publikationen/algainp-growth-parameter-optimisation-during-movpe-for-opto-electronic-devices
For (AlxGa1-x)1-yInyP growth on GaAs for opto-electronic devices in metal-organic vapour phase epitaxy an accurate control of the aluminium content x and of the indium content y is crucial.…
Comprehensive study of (Al)GaAs Si-doping using reflectance anisotropy spectroscopy in metal-organic vapour-phase epitaxy
/forschung/publikationen/comprehensive-study-of-algaas-si-doping-using-reflectance-anisotropy-spectroscopy-in-metal-organic-vapour-phase-epitaxy
The n-type doping of (Al)GaAs grown on GaAs using silicon (Si) was studied in metal-organic vapour-phase epitaxy using reflectance anisotropy spectroscopy. The reflectance anisotropy (RA) of GaAs was…
Segregation and desorption of antimony in InP (0 0 1) in MOVPE
/forschung/publikationen/segregation-and-desorption-of-antimony-in-inp-0-0-1-in-movpe
We investigated the segregation of Sb on InP in metalorganic vapour phase epitaxy (MOVPE). A clean PH3 stabilized InP(0 0 1) surface is exposed to trimethyl antimony (TMSb) and then…
Influence of the barrier composition on the light output of InGaN multiple-quantum-well ultraviolet light emitting diode
/forschung/publikationen/influence-of-the-barrier-composition-on-the-light-output-of-ingan-multiple-quantum-well-ultraviolet-light-emitting-diode
MOVPE grown InGaN multiple-quantum-well (MQW) light emitting diodes (LEDs) on c-plane (0001) sapphire emitting at 375 nm with GaN, Al0.16Ga0.84N and InxAl0.16GaN-barrier layers were investigated…
Improved Design Methodology for a 2 GHz Class-E Hybrid Power Amplifier Using Packaged GaN-HEMTs
/forschung/publikationen/improved-design-methodology-for-a-2-ghz-class-e-hybrid-power-amplifier-using-packaged-gan-hemts
This paper reports on design methodology and realization of a class-E power amplifier (PA) for 2 GHz using a packaged GaN-HEMT. The circuit achieves 36 dBm output power and 57 % PAE,…
Feeding Structures for Packaged Multifinger Power Transistors
/forschung/publikationen/feeding-structures-for-packaged-multifinger-power-transistors
Power transistors consist of a large number of cells, which are fed by a long row of parallel bonding wires. All cells are to be operated synchronously in order to avoid output power degradation.…