Detection of THz radiation with semiconductor diode lasers
C. Brenner1, S. Hoffmann1, M.R. Hofmann1, M. Salhi2, M. Koch2, A. Klehr3, G. Erbert3, G. Tränkle3, J.T. Steiner4, M. Kira4, and S.W. Koch4
Published in:
Appl. Phys. Lett., vol. 91, no. 10, pp. 101107 (2007).
Abstract:
As a consequence of the strong many-body interactions in the electron-hole plasma, a semiconductor laser efficiently interacts with terahertz radiation. The injection of terahertz laser radiation into the active region of a diode laser induces a measurable variation of the voltage over the p-n junction, indicating the potential of a semiconductor laser to act as a terahertz detector.
1 AG Optoelektronische Bauelemente und Werkstoffe, Ruhr-Universität Bochum, D-44780 Bochum, Germany
2 TU Braunschweig, D-38106 Braunschweig, Germany
3 Ferdinand Braun Institut für Höchstfrequenztechnik, D-12489 Berlin, Germany
4 Department of Physics and Material Sciences Center, Philipps-Universität Marburg, D-35032 Marburg, Germany
Topics:
Leptons, Many body problems, Semiconductor diodes, Terahertz detectors, Terahertz laser, Terahertz radiation, Semiconductor lasers, Excitons, Acoustic phenomena, P-N junctions
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