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Proton-implanted shallow-ridge quantum-cascade laser

/forschung/publikationen/proton-implanted-shallow-ridge-quantum-cascade-laser

We demonstrate a shallow-ridge quantum-cascade laser (QCL) with performance comparable or better than that of deep-ridge QCLs fabricated from the same wafer. The shallow-ridge QCL emits at /spl ap/4…

Calibration Standards Verification Procedure Using the Calibration Comparison Technique

/forschung/publikationen/calibration-standards-verification-procedure-using-the-calibration-comparison-technique

This article examines the verification procedure of coplanar calibration standards based on the calibration comparison technique. For the first time, different commercially available alumina…

Accurate modelling of InGaN quantum wells

/forschung/publikationen/accurate-modelling-of-ingan-quantum-wells

The internal field, the band structure and the oscillator strengths of the optical transitions of wurtzite strained InGaN quantum wells are accurately computed by a self-consistent solution of the…

A GaAs HBT Low Power 24 GHz Downconverter with On-Chip Local-Oscillator

/forschung/publikationen/a-gaas-hbt-low-power-24-ghz-downconverter-with-on-chip-local-oscillator

In this paper, we present a low-power mixer with integrated local oscillator intended for use in a 24 GHz receiver front-end. The chip is realized using HBT GaAs technology. The…

Hybrid and passive mode-locking of a two-section laser diode in a Fourier transform external cavity

/forschung/publikationen/hybrid-and-passive-mode-locking-of-a-two-section-laser-diode-in-a-fourier-transform-external-cavity

Passive and hybrid modelocking of a two-section laser diode in an external cavity is investigated. The cavity contains a Fourier transformation that enables spatial separation and individual…

Aplanatism for positive and negative refractive index

/forschung/publikationen/aplanatism-for-positive-and-negative-refractive-index

The development of optical metamaterials showed surprising variations of the imaging by optical surfaces between optical materials with different signs of the refractive index. In these cases, the…

Vapour Phase Epitaxy for GaN Substrates

/forschung/publikationen/vapour-phase-epitaxy-for-gan-substrates

This paper reviews the current status of the production of freestanding gallium nitride (GaN) substrates for homoepitaxy of GaN devices. The limitations of the use of foreign substrates like sapphire…

High-power and highly efficient Tm3+-doped silica fiber lasers pumped with diode lasers operating at 1150 nm

/forschung/publikationen/high-power-and-highly-efficient-tm3-doped-silica-fiber-lasers-pumped-with-diode-lasers-operating-at-1150nbspnm

Tm3+-doped silica fiber laser was pumped with high-power 1150 nm diode lasers. Pump excited state absorption from the upper laser level populates higher energy levels allowing cross relaxation…

High-power and highly efficient diode-cladding-pumped Ho3+-doped silica fiber lasers

/forschung/publikationen/high-power-and-highly-efficient-diode-cladding-pumped-ho3-doped-silica-fiber-lasers

We demonstrate high-power operation from a singly Ho3+-doped silica fiber laser that is cladding pumped directly with diode lasers operating at 1150 nm. Internal slope efficiencies approaching…

Directly diode-pumped holmium fiber lasers

/forschung/publikationen/directly-diode-pumped-holmium-fiber-lasers

Sensitizer-free holmium-doped silica and fluoride mid-infrared fiber lasers are pumped using a high-power diode laser operating at 1148 nm. A maximum output power of 162 mW at…