Mechanism of LiAlO2 decomposition during the GaN growth on (100) γ-LiAlO2
A. Mogilatenko1, W. Neumann1, E. Richter2, M. Weyers2, B. Velickov3 and R. Uecker3
Published in:
J. Appl. Phys., vol. 102, no. 2, pp. 023519 (2007).
Abstract:
c-plane oriented GaN nucleation layers have been grown on (100) γ-LiAlO2 substrates by hydride vapor phase epitaxy. Longer recrystallization time favors the decomposition of the LiAlO2 substrate underneath the layers. The LiAlO2 decomposition at the GaN/LiAlO2 interface is accompanied by the formation of the epitaxial LiAl5O8 crystallites which are at least partly surrounded by cavities in the LiAlO2 matrix. The results suggest a mechanism that explains the spontaneous separation of thick GaN layers from LiAlO2 substrates during post-growth cooling down.
1 Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, 12489 Berlin, Germany
2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
3 Institut für Kristallzüchtung, Max-Born-Strasse 2, 12489 Berlin, Germany
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