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Correction of picosecond voltage pulses measured with external electro-optic sampling tips
/forschung/publikationen/correction-of-picosecond-voltage-pulses-measured-with-external-electro-optic-sampling-tips
We quantify the distortion that an external electro-optic sampling tip imprints on a measured picosecond voltage pulse propagating on a coplanar stripline. In order to characterize the sampling tip,…
Self-separation of thick two inch GaN layers grown by HVPE on sapphire using epitaxial lateral overgrowth with masks containing tungsten
/forschung/publikationen/self-separation-of-thick-two-inch-gan-layers-grown-by-hvpe-on-sapphire-using-epitaxial-lateral-overgrowth-with-masks-containing-tungsten
Self-separation of freestanding GaN layers of 50 mm diameter and thicknesses from around 50 µm to several hundred µm has been achieved using lateral overgrowth over silicon…
Degradation behavior and thermal properties of red (650 nm) high-power diode single emitters and laser bars
/forschung/publikationen/degradation-behavior-and-thermal-properties-of-red-650-nm-high-power-diode-single-emitters-and-laser-bars
The degradation behavior of broad-area laser diodes and bars emitting at 650 nm under constant power operation is investigated. In addition to the increase in operation current the temperature…
670 nm tapered lasers and amplifiers with output powers P > 1 W and nearly diffraction limited beam quality
/forschung/publikationen/670nbspnm-tapered-lasers-and-amplifiers-with-output-powers-pnbspgtnbsp1nbspw-and-nearly-diffraction-limited-beam-quality
High-brightness tapered lasers and amplifiers at 670 nm with output powers up to 1 W and nearly diffraction limited beam quality were realised. The devices consist of a 750 µm…
Reliable operation of 785 nm DFB diode lasers for rapid Raman spectroscopy
/forschung/publikationen/reliable-operation-of-785nbspnm-dfb-diode-lasers-for-rapid-raman-spectroscopy
Experimental results on RW and BA DFB lasers emitting at 785 nm suitable for Raman spectroscopy are presented. Optical spectra of the RW DFB laser reveal single mode operation with a side-mode…
Gradual degradation of red-emitting high-power diode laser bars
/forschung/publikationen/gradual-degradation-of-red-emitting-high-power-diode-laser-bars
The authors analyze early stages of gradual degradation in highly reliable 650 nm emitting high-power diode laser arrays with continuous wave emission powers of 2.5 W (facet load of 4…
Red luminescence from freestanding GaN grown on LiAlO2 substrate by hydride vapor phase epitaxy
/forschung/publikationen/red-luminescence-from-freestanding-gan-grown-on-lialo2-substrate-by-hydride-vapor-phase-epitaxy
Photoluminescence (PL) spectroscopy was used to study the red luminescence band from freestanding GaN grown on LiAlO2 substrate by hydride vapor phase epitaxy. The red luminescence band was observed…
Long-term reliability studies of high-power 808 nm tapered diode lasers with stable beam quality
/forschung/publikationen/long-term-reliability-studies-of-high-power-808-nm-tapered-diode-lasers-with-stable-beam-quality
Long-term ageing tests of 808 nm tapered diode lasers with tensile-strained GaAsP quantum wells embedded in AlGaAs waveguides are presented. The lasers have been aged over 7200 h at an…
Terahertz generation with a 1064nm DFB laser diode
/forschung/publikationen/terahertz-generation-with-a-1064nm-dfb-laser-diode
Optoelectronic generation of continuous THz radiation with a compact, high power DFB laser which operates simultaneously on two longitudinal modes corresponding to the fundamental and first-order…
650 nm InGaP broad area lasers with 5000 h reliable operation at 600 mW
/forschung/publikationen/650nbspnm-ingap-broad-area-lasers-with-5000nbsph-reliable-operation-at-600nbspmw
Reliable operation of 650-nm broad area laser diodes with InGaP quantum-wells embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers is reported. Mounted on …