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Comparative Study of Shot-Noise Models for HBTs
/forschung/publikationen/comparative-study-of-shot-noise-models-for-hbts
Although the shot-noise sources in bipolar transistors are strongly correlated, it is highly desirable for several reasons to rely on an approximative model that requires only noncorrelated sources.…
A Broadband GaN-MMIC Power Amplifier for L to X Bands
/forschung/publikationen/a-broadband-gan-mmic-power-amplifier-for-l-to-x-bands
A broadband GaN monolithic power amplifier covering the L to X bands is presented as is required for various applications in measurement set-ups and multi-band systems. It is based on 8 transistor…
Current Gain Collapse in HBTs Analysed by Transient Interferometric Mapping Method
/forschung/publikationen/current-gain-collapse-in-hbts-analysed-by-transient-interferometric-mapping-method
Thermal distribution during a current gain collapse event is investigated in multi-finger InGaP/GaAs HBTs using the transient interferometric mapping method. The onset of the collapse is observed at…
On the Ignition Voltage Behavior of Microwave Microplasmas
/forschung/publikationen/on-the-ignition-voltage-behavior-of-microwave-microplasmas
Small-sized plasmas excited at microwave frequencies offer interesting applications from industrial processing to medicine. This paper presents first data on the ignition voltages of such microwave…
On the equivalence between cylindrical and rectangular via-holes in electromagnetic modeling
/forschung/publikationen/on-the-equivalence-between-cylindrical-and-rectangular-via-holes-in-electromagnetic-modeling
In the em simulation of MMICs and packages it is often advantageous to use vias with rectangular cross-section instead of cicular ones, because this allows for more efficient meshing thus reducing…
Ultrashort pulse Yb:LaSc3(BO3)4 mode-locked oscillator
/forschung/publikationen/ultrashort-pulse-yblasc3bo34-mode-locked-oscillator
Passive mode-locked laser operation based on an Yb-doped lanthanum scandium borate crystal is demonstrated. Pulse durations as short as 58 fs and 67 fs were achieved applying a Ti:sapphire-…
3-W Broad Area Lasers and 12-W Bars With Conversion Efficiencies up to 40% at 650 nm
/forschung/publikationen/3-w-broad-area-lasers-and-12-w-bars-with-conversion-efficiencies-up-to-40-at-650-nm
Highly efficient 650-nm high-power broad-area laser diodes and laser bars with single quantum well InGaP quantum wells embedded in AlGaInP waveguide layers, and n-AlInP and p-AlGaAs cladding layers…
9-W Output Power From an 808-nm Tapered Diode Laser in Pulse Mode Operation With Nearly Diffraction-Limited Beam Quality
/forschung/publikationen/9-w-output-power-from-an-808-nm-tapered-diode-laser-in-pulse-mode-operation-with-nearly-diffraction-limited-beam-quality
808-nm tapered diode lasers are fabricated based on a super-large optical-cavity (SLOC) structure with very small divergence of 18° full width at half-maximun (FWHM). A 16-W overall output power…
Thermal lensing in high-power ridge-waveguide lasers
/forschung/publikationen/thermal-lensing-in-high-power-ridge-waveguide-lasers-1
The lateral farfield characteristics of ridge-waveguide (RW) lasers emitting around 1064 nm an output power of 1.3 W at an injection current of 2 A were measured and modeled. Due to…
High energy irradiation effects on AlGaN/GaN HFET devices
/forschung/publikationen/high-energy-irradiation-effects-on-algangan-hfet-devices
The effect of proton, carbon, oxygen and krypton irradiation on AlGaN HFET devices has been studied. Irradiation was performed at 68 and 120 MeV with fluences in the range from 1 × 107 to 1 × 1013…