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Feedback controlled growth of strain-balanced InGaAs multiple quantum wells in metal-organic vapour phase epitaxy using an in situ curvature sensor
/forschung/publikationen/feedback-controlled-growth-of-strain-balanced-ingaas-multiple-quantum-wells-in-metal-organic-vapour-phase-epitaxy-using-an-in-situ-curvature-sensor
The growth of InGaAs quantum wells (QWs) on GaAs was optimized in situ using a high-resolution curvature sensor in metal-organic vapour phase epitaxy. The very small change in substrate curvature due…
Freestanding two inch c-plane GaN layers grown on (100) γ-lithium aluminium oxide by hydride vapour phase epitaxy
/forschung/publikationen/freestanding-two-inch-c-plane-gan-layers-grown-on-100-g-lithium-aluminium-oxide-by-hydride-vapour-phase-epitaxy
(100) γ-lithium aluminium oxide substrates of two inch diameter were fabricated from crystals grown by the Czochralski technique. Onto these substrates c-plane GaN with a thickness of about 200…
Bowing of thick GaN layers grown by HVPE using ELOG
/forschung/publikationen/bowing-of-thick-gan-layers-grown-by-hvpe-using-elog
Intrinsic stress in GaN layers grown by HVPE on sapphire substrates results in wafer breakage for thicknesses exceeding 40 µm. Using ELOG 180 µm GaN can be grown on 2 inch. The…
High and low energy proton irradiation effects on AlGaN/GaN HFETs
/forschung/publikationen/high-and-low-energy-proton-irradiation-effects-on-algangan-hfets
AlGaN/GaN heterojunction field effect transistors (HFETs) have been irradiated with protons at 68 MeV and 2 MeV with fluences up to 1013 cm-2 in order to simulate operation in space. Hall…
N-type doping of HVPE-grown GaN using dichlorosilane
/forschung/publikationen/n-type-doping-of-hvpe-grown-gan-using-dichlorosilane
N-type doping of GaN in hydride vapour phase epitaxy (HVPE) has been studied. While silane was found to be not suitable, doping from solid silicon was found to be feasible but difficult to handle.…
Characterization of free standing GaN grown by HVPE on a LiAlO2 substrate
/forschung/publikationen/characterization-of-free-standing-gan-grown-by-hvpe-on-a-lialo2-substrate
A 230 µm thick free standing GaN layer has been grown on a LiAlO2 substrate by hydride vapor phase epitaxy, with the separation of the layer from the substrate occuring spontaneously…
Near room temperature electrical injection lasing for dilute nitride Ga(NAsP)/GaP quantum-well structures grown by metal organic vapour phase epitaxy
/forschung/publikationen/near-room-temperature-electrical-injection-lasing-for-dilute-nitride-ganaspgap-quantum-well-structures-grown-by-metal-organic-vapour-phase-epitaxy
Electrical injection lasing has been verified for GaP-based broad-area Ga(NAsP)/GaP single-quantum-well heterostructures near room temperature for the first time. The lasers have been grown by metal…
Accurate modeling of InGaN quantum wells
/forschung/publikationen/accurate-modeling-of-ingan-quantum-wells
The internal field, the band structure and the oscillator strengths of the optical transitions of wurtzite strained InGaN QWs are accurately computed by a self-consistent solution of the Poisson…
Optically pumped semiconductor disk laser with graded and step indices
/forschung/publikationen/optically-pumped-semiconductor-disk-laser-with-graded-and-step-indices
Results of a study of different gain section designs in nonresonantly optically pumped vertically emitting semiconductor disk lasers (SCDLs) are presented. Clear superiority of structures with…
Exciton resonance tuning for the generation of subpicosecond pulses from a mode-locked semiconductor disk laser
/forschung/publikationen/exciton-resonance-tuning-for-the-generation-of-subpicosecond-pulses-from-a-mode-locked-semiconductor-disk-laser
The authors investigate the spectral tuning of the exciton resonance of a surface quantum well saturable absorber mirror for the generation of subpicosecond pulses, employing an optically pumped…