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Spatially controlled epitaxial growth of 2D heterostructures via defect engineering using a focused He ion beam
/forschung/publikationen/spatially-controlled-epitaxial-growth-of-2d-heterostructures-via-defect-engineering-using-a-focused-he-ion-beam
The combination of two-dimensional (2D) materials into heterostructures enables the formation of atomically thin devices with designed properties. To achieve a high-density, bottom-up integration,…
Temperature Dependence of Dark Spot Diameters in GaN and AlGaN
/forschung/publikationen/temperature-dependence-of-dark-spot-diameters-in-gan-and-algan-1
Threading dislocations in c-plane (Al,Ga)N layers are surrounded by areas with reduced light generation efficiency, called "dark spots." These areas are observable in luminescence…
Study on the Optimization of the Common Source Inductance for GaN Transistors
/forschung/publikationen/study-on-the-optimization-of-the-common-source-inductance-for-gan-transistors-1
Optimization of the common source inductance of GaN-based transistors is investigated in this paper concerning different design levels, namely bond wires, package layout and PCB layout. The impact of…
Progress in High Power Diode Laser Pumps for High-Energy Class Mid Infra-Red Lasers
/forschung/publikationen/progress-in-high-power-diode-laser-pumps-for-high-energy-class-mid-infra-red-lasers
Epitaxial design development in 780 nm diode lasers for lower loss and lower bias-driven leakage enables increases in power (to 210 W) and conversion efficiency (to 57% at 60 W) in…
Highly Asymmetric Epitaxial Designs for Increased Power and Efficiency in kW-Class GaAs-Based Diode Laser Bars
/forschung/publikationen/highly-asymmetric-epitaxial-designs-for-increased-power-and-efficiency-in-kw-class-gaas-based-diode-laser-bars
1-cm single quantum well laser bars at 910-940nm wavelengths are presented, using extremely asymmetric layer designs for increased power. In quasi-CW testing, bars with 4mm resonators provide output…
Stability of ZnSe-passivated laser facets cleaved in air and in ultra-high vacuum
/forschung/publikationen/stability-of-znse-passivated-laser-facets-cleaved-in-air-and-in-ultra-high-vacuum
Single-mode 1064 nm ridge-waveguide lasers with double and triple quantum wells are used to compare the facet stability of ultra-high vacuum cleaved and ZnSe-passivated lasers with air-cleaved,…
Investigations on Operational Reliability of 808 nm QCW Laser Diode Half-Bars for Space-Borne Applications
/forschung/publikationen/investigations-on-operational-reliability-of-808-nm-qcw-laser-diode-half-bars-for-space-borne-applications
Laser diode half-bars with 16 emitters were manufactured and qualified for pulsed high-power operation on the satellite MERLIN. Stress accelerated life tests of 20 laser half-bars were performed for…
970 nm DBR Broad-Area Semiconductor Lasers with 60% Conversion Efficiency
/forschung/publikationen/970-nm-dbr-broad-area-semiconductor-lasers-with-60-conversion-efficiency
Progress in epitaxial design to enhance power and efficiency of spectrally-stabilized broad-area lasers at operating wavelength 970nm is presented. 200µm wide and 4mm long DBR lasers with a…
Diode Lasers with Internal Wavelength Stabilization for LiDAR Applications
/forschung/publikationen/diode-lasers-with-internal-wavelength-stabilization-for-lidar-applications
The development of diode lasers with internal wavelength stabilization and powered by inhouse electrical drivers generating 2ns to 10ns long electrical pulses is reviewed. Different power classes…
The impact of longitudinal spatial hole burning on the carrier density profile in high-power lasers
/forschung/publikationen/the-impact-of-longitudinal-spatial-hole-burning-on-the-carrier-density-profile-in-high-power-lasers
Spatially resolved spontaneous emission intensity and spectrum were used to demonstrate the longitudinal-spatial-hole-burning (LSHB)-induced non-uniform carrier density along the resonator in high…