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Vertical GaN MISFET for chip-on-chip high speed laser driving applications
/forschung/publikationen/vertical-gan-misfet-for-chip-on-chip-high-speed-laser-driving-applications
In this work, the authors developed vertical gallium nitride metal-insulator-semiconductor field-effect transistors (GaN MISFETs) for direct chip-on-chip assembly with gallium arsenide-based broad…
Simulation of an Integrated UTC-Photodiode with a High-Speed TIA for 5G mm-Wave Generation
/forschung/publikationen/simulation-of-an-integrated-utc-photodiode-with-a-high-speed-tia-for-5g-mm-wave-generation
This work introduces a subsystem level co-simulation for generation, boosting and transmission of millimeter wave signals for 5G applications. The simulation processes to model the full equivalent…
Passive Detection and Imaging of Human Body Radiation Using an Uncooled Field-Effect Transistor-Based THz Detector
/forschung/publikationen/passive-detection-and-imaging-of-human-body-radiation-using-an-uncooled-field-effect-transistor-based-thz-detector
This work presents, to our knowledge, the first completely passive imaging with human-body-emitted radiation in the lower THz frequency range using a broadband uncooled detector. The sensor consists…
A High-Isolation and Highly Linear Super-Wideband SPDT Switch in InP DHBT Technology
/forschung/publikationen/a-high-isolation-and-highly-linear-super-wideband-spdt-switch-in-inp-dhbt-technology
This work presents an SPDT switch with more than 235 GHz bandwidth, fabricated using 800 nm InP DHBT technology. Three cascaded shunt stages were used to achieve high isolation and…
High Efficiency, High Bandwidth Switch-Mode Envelope Tracking Supply Modulator
/forschung/publikationen/high-efficiency-high-bandwidth-switch-mode-envelope-tracking-supply-modulator
This paper presents a novel amplitude modulator concept for envelope tracking power amplifiers, which provides maximum efficiency in the lower output voltage ranges, thus nicely matching the…
L-Band Floating-Ground RF Power Amplifier for Reverse-Type Envelope Tracking Systems
/forschung/publikationen/l-band-floating-ground-rf-power-amplifier-for-reverse-type-envelope-tracking-systems
This paper presents a 50 W floating-ground RF power amplifier for L-Band applications. The amplifier is intended to be used in a reverse-type envelope tracking system with supply voltages of up…
High Output Power Ultra-Wideband Distributed Amplifier in InP DHBT Technology Using Diamond Heat Spreader
/forschung/publikationen/high-output-power-ultra-wideband-distributed-amplifier-in-inp-dhbt-technology-using-diamond-heat-spreader
This work reports on a highly linear and high output power ultra-wideband distributed amplifier with improved thermal properties using a diamond layer for heat spreading. The performances of a…
Broadband Driver Amplifier with Voltage Offset for GaN-based Switching PAs
/forschung/publikationen/broadband-driver-amplifier-with-voltage-offset-for-gan-based-switching-pas
The paper presents a GaN-based driver amplifier (PSA) module with potential shifting included, suitable for properly driving GaN-HEMTs with digital bit sequences in the microwave range. The PSA is…
Improved Efficiency of Ultraviolet B Light-Emitting Diodes with Optimized p-Side
/forschung/publikationen/improved-efficiency-of-ultraviolet-b-light-emitting-diodes-with-optimized-p-side
The effects of design and thicknesses of different optically transparent p-current spreading layers [short-period superlattice, superlattice (SL), and bulk p-Al0.38Ga0.62N] as well as the type and…
Kilowatt-class, High Duty Cycle, Passively Side-cooled 780 nm Diode Laser Stacks as Pumps for Pulsed MIR Lasers
/forschung/publikationen/kilowatt-class-high-duty-cycle-passively-side-cooled-780nbspnm-diode-laser-stacks-as-pumps-for-pulsed-mir-lasers
A 780nm diode laser pump source is presented that uses passive side-cooling to enable Kilowatt-class output at >10% duty cycle (10ms, 10Hz). Beam quality is M2<360 (BPP<90mm-mrad) and…