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Experimental investigation of optical feedback from periodically poled crystals for nonlinear frequency conversion
/forschung/publikationen/experimental-investigation-of-optical-feedback-from-periodically-poled-crystals-for-nonlinear-frequency-conversion
Crystals with nonlinear optical properties are widely used for frequency conversion of laser light. Thereby wavelength ranges beyond the laser’s emission spectrum can be reached [1] enabling new…
Miniaturized Master-Oscillator Power-Amplifier emitting at 626 nm
/forschung/publikationen/miniaturized-master-oscillator-power-amplifier-emitting-at-626-nm
Laser cooling of beryllium ions is a key enabler for quantum technologies such as e.g. optical clocks [1] or crystallization of highly charged ions [2] . It requires laser light at 313 nm, which…
Externally Wavelength-Stabilized Single Mode Lasers with 65% Conversion Efficiency and 50 pm Spectral Width at 1 W Output
/forschung/publikationen/externally-wavelength-stabilized-single-mode-lasers-with-65-conversion-efficiency-and-50-pm-spectral-width-at-1-w-output
Dense wavelength beam combining (DWBC) techniques can be used to image many diode lasers into a single beam with minimal degradation of beam quality M295% (at 95% power) and conversion efficiency…
Advances towards deep-UV light emitting diode technologies
/forschung/publikationen/advances-towards-deep-uv-light-emitting-diode-technologies
Driven by a wide range of applications, as shown in Fig. 1(a) , the development of AlGaN-based light emitting diodes in the deep ultraviolet spectral range (DUV-LEDs) has greatly intensified. In…
Experimental investigation of nanosecond pulsed tapered-waveguide lasers obtaining extremely high brightness values
/forschung/publikationen/experimental-investigation-of-nanosecond-pulsed-tapered-waveguide-lasers-obtaining-extremely-high-brightness-values
Diode lasers generating nanosecond-long optical pulses with high output powers and a good beam quality are used for various applications, such as light detection and ranging (LiDAR) systems needed…
DBR-tapered lasers at 783 nm with narrowband emission and output powers up to 7 W
/forschung/publikationen/dbr-tapered-lasers-at-783-nm-with-narrowband-emission-and-output-powers-up-to-7-w
Wavelength stabilized, high-power diode lasers in the spectral range around 783 nm are requested as e.g. pump lasers for Tm:YAG lasers and as excitation light sources for Raman spectroscopy. In…
Vertical Design Approach for Suppressing Power Saturation in GaAs-Based High-Power Diode Lasers
/forschung/publikationen/vertical-design-approach-for-suppressing-power-saturation-in-gaas-based-high-power-diode-lasers
High-power GaAs-based diode lasers are the most efficient light sources and thus used in many industrial applications. Higher peak output power (Popt) and efficiency (ηE) are sought to reduce…
Increased Conversion Efficiency at 800 W Continuous Wave Output From Single 1-cm Diode Laser Bars at 940 nm
/forschung/publikationen/increased-conversion-efficiency-at-800-w-continuous-wave-output-from-single-1-cm-diode-laser-bars-at-940-nm
Diode lasers are key sources of optical energy for industrial machine tools and continuous improvement in their performance is needed to support performance and cost scaling efforts. For example,…
Semiconductor Laser Linewidth Theory Revisited
/forschung/publikationen/semiconductor-laser-linewidth-theory-revisited
More and more applications require semiconductor lasers distinguished not only by large modulation bandwidths or high output powers, but also by small spectral linewidths. The theoretical…
GaN-channel HEMTs with AlN buffer for high-voltage switching
/forschung/publikationen/gan-channel-hemts-with-aln-buffer-for-high-voltage-switching
Lateral GaN-based transistors (HEMTs) for power-electronic switching up to 650 V have not yet approached their theoretical material limit in terms of RONA vs. VBr - unlike Si and SiC based…