Suche

Regeln für die Suche

  • Nur Wörter mit 2 oder mehr Zeichen werden akzeptiert
  • Maximal 200 Zeichen insgesamt
  • Leerzeichen werden zur Trennung von Worten verwendet, "" kann für die Suche nach ganzen Zeichenfolgen benutzt werden (keine Indexsuche)
  • UND, ODER und NICHT sind Suchoperatoren, die den standardmäßigen Operator überschreiben. +/|/- entspricht UND, ODER und NICHT als Operatoren
  • Alle Suchwörter werden zu Kleinschreibung konvertiert
Suchergebnisse 1571 bis 1580 von 5317

16.3 W Peak-Power Pulsed All-Diode Laser Based Multi-Wavelength Master-Oscillator Power-Amplifier System at 964 nm

/forschung/publikationen/163-w-peak-power-pulsed-all-diode-laser-based-multi-wavelength-master-oscillator-power-amplifier-system-at-964-nm

An all-diode laser-based master oscillator power amplifier (MOPA) configuration for the generation of ns-pulses with high peak power, stable wavelength and small spectral line width is presented. The…

Subsequent treatment of leafy vegetables with low doses of UVB-radiation does not provoke cytotoxicity, genotoxicity, or oxidative stress in a human liver cell model

/forschung/publikationen/subsequent-treatment-of-leafy-vegetables-with-low-doses-of-uvb-radiation-does-not-provoke-cytotoxicity-genotoxicity-or-oxidative-stress-in-a-human-liver-cell-model

Ultraviolet B (UVB) radiation in low but ecological-relevant doses acts as a regulator in the plant’s secondary metabolism. This study investigates the effect of UVB radiation from light-emitting…

Feedback Sensitivity of Detuned DBR Semiconductor Lasers

/forschung/publikationen/feedback-sensitivity-of-detuned-dbr-semiconductor-lasers-1

A distributed Bragg reflector (DBR) laser represents a simple realization of a semiconductor laser operating in a single longitudinal mode. We present a so far missing theoretical study how its…

High-Temperature Annealing and Patterned AlN/Sapphire Interfaces

/forschung/publikationen/high-temperature-annealing-and-patterned-alnsapphire-interfaces

Using the example of epitaxial lateral overgrowth of AlN on trench-patterned AlN/sapphire templates, the impact of introducing a high-temperature annealing step into the process chain is…

Mode-locked Cr:LiSAF laser far off the gain peak: tunable sub-200-fs pulses near 1 µm

/forschung/publikationen/mode-locked-crlisaf-laser-far-off-the-gain-peak-tunable-sub-200-fs-pulses-near-1-microm

We report, to the best of our knowledge, the first mode-locking results of a Cr:LiSAF laser near the 1 µmregion. The system is pumped only by a single 1.1 W high-brightness tapered…

A Polarization Switchable Antenna Switch Module for Ka-band Application

/forschung/publikationen/a-polarization-switchable-antenna-switch-module-for-ka-band-application

Operating at millimeter-wave or above has been the major trend for the next-generation wireless communication systems to acquire enough bandwidth. Consequently, antenna arrays with large number of…

Ten emitter dual-wavelength Y-branch DBR laser diode array emitting 1 W at 785 nm with a spectral emission width below 60 pm

/forschung/publikationen/ten-emitter-dual-wavelength-y-branch-dbr-laser-diode-array-emitting-1-w-at-785-nm-with-a-spectral-emission-width-below-60-pm

We present a 5 mm wide ten emitter dual-wavelength Y-branch DBR laser diode array emitting at 785 nm with an output power of 1 W at both wavelengths. The two emission wavelengths are…

Current Status of Carbon-Related Defect Luminescence in GaN

/forschung/publikationen/current-status-of-carbon-related-defect-luminescence-in-gan

Highly insulating layers are a prerequisite for gallium nitride (GaN)-based power electronic devices. For this purpose, carbon doping is one of the currently pursued approaches. However, its impact…

Compact 12×12-Pixel THz Camera using AlGaN/GaN HEMT Technology Operating at Room Temperature

/forschung/publikationen/compact-12x12-pixel-thz-camera-using-algangan-hemt-technology-operating-at-room-temperature

We report on a THz detector camera with a monolithically integrated 12×12 detector array of AlGaN/GaN TeraFETs. The camera operates in the range 100 GHz - 2 THz and is the first of…

An Efficient 400 GHz Active Multiplier-Based Signal Source for Terahertz Applications

/forschung/publikationen/an-efficient-400-ghz-active-multiplier-based-signal-source-for-terahertz-applications

This paper presents a 400 GHz signal source using a 0.8 µm transferred substrate (TS) InP-HBT technology. The signal source is based on an active balanced doubler and delivers…