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A Highly Efficient W-Band Rectifier MMIC in InP HBT Technology
/forschung/publikationen/a-highly-efficient-w-band-rectifier-mmic-in-inp-hbt-technology
This paper presents a highly-efficient on-chip W-band single-diode rectifier for energy recovery in 6G transmitters and wireless power transfer applications. For the first time a W-band rectifier has…
Localization of Trapping Effects in GaN HEMTs with Pulsed S-parameters and Compact Models
/forschung/publikationen/localization-of-trapping-effects-in-gan-hemts-with-pulsed-s-parameters-and-compact-models
Reliable operation at high frequencies has established GaN-based electronics in the high-power and high-frequency market. Investigating the impact of trapping effects on the frequency evolution of…
An Efficient and Fast Reverse Buck Converter for High-Power Envelope-Tracking Systems
/forschung/publikationen/an-efficient-and-fast-reverse-buck-converter-for-high-power-envelope-tracking-systems
This paper presents an efficient and fast reverse buck converter targeting high-power envelope-tracking applications with up to 20 MHz instantaneous bandwidth. The power stage is based on RF…
Technology for the Heterointegration of InP DHBT Chiplets on a SiGe BiCMOS Chip for mm-wave MMICs
/forschung/publikationen/technology-for-the-heterointegration-of-inp-dhbt-chiplets-on-a-sige-bicmos-chip-for-mm-wave-mmics
We present a low-temperature flip-chip-based mounting technology, enabling integration of indium phosphide (InP)-based chiplets on BiCMOS. The process temperatures of well below 200°C allow to…
Temperature dependence of the complex permittivity in microwave range of some industrial polymers
/forschung/publikationen/temperature-dependence-of-the-complex-permittivity-in-microwave-range-of-some-industrial-polymers
The microwave properties of a number of polymers common in industry are investigated. A cylindrical resonator in the TM012 mode is used. The cavity perturbation method and detailed COMSOL simulations…
Precise prediction of optical behaviour of mechanically stressed edge emitting GaAs devices
/forschung/publikationen/precise-prediction-of-optical-behaviour-of-mechanically-stressed-edge-emitting-gaas-devices
The presence of a thermally annealed metallization layer on top of a GaAs slab waveguide proofed to be of strong impact on the optical device behavior. Induced by the stress on the chip the…
A 3-D Printed Helix for Traveling-Wave Tubes
/forschung/publikationen/a-3-d-printed-helix-for-traveling-wave-tubes
In this work, a 3-D printed copper helix for a traveling-wave tube (TWT) is reported. The fabricated helix was designed to be used in a TWT operating at millimeter-wave frequencies (60-80 GHz).…
Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs
/forschung/publikationen/isolation-properties-and-failure-mechanisms-of-vertical-pt-n-gan-sbds
This paper reports on the isolation properties and failure mechanism of n-type vertical Pt / n-GaN Schottky barrier diodes and the dependence on the drift layer doping concentration. The results…
Hybrid integrated mode-locked laser using a GaAs-based 1064 nm gain chip and a SiN external cavity
/forschung/publikationen/hybrid-integrated-mode-locked-laser-using-a-gaas-based-1064-nm-gain-chip-and-a-sin-external-cavity
External cavity mode-locked lasers could be used as comb sources for high volume application such as LIDAR and dual comb spectroscopy. Currently demonstrated chip scale integrated mode-locked lasers…
Distributed Bragg reflector lasers emitting between 696 and 712 nm
/forschung/publikationen/distributed-bragg-reflector-lasers-emitting-between-696-and-712-nm
The authors report on design, fabrication, and electro-optical characterization of single-frequency diode lasers emitting around 696, 707, and 712 nm. This has been achieved by a variation of…