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Origin of defect luminescence in ultraviolet emitting AlGaN diode structures
/forschung/publikationen/origin-of-defect-luminescence-in-ultraviolet-emitting-algan-diode-structures
Light emitting diode structures emitting in the ultraviolet spectral range are investigated. The samples exhibit defect luminescence bands. Synchrotron-based photoluminescence excitation spectroscopy…
Novel 900 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions
/forschung/publikationen/novel-900-nm-diode-lasers-with-epitaxially-stacked-multiple-active-regions-and-tunnel-junctions
A multi-active-region bipolar-cascade edge-emitting laser emitting at nearly 900 nm is presented. The three active regions and two tunnel junctions located in a single waveguide core share the…
A 52-58 GHz Power Amplifier With 18.6-dBm Saturated Output Power for Space Applications
/forschung/publikationen/a-52-58-ghz-power-amplifier-with-186-dbm-saturated-output-power-for-space-applications
This brief presents a 52-58 GHz power amplifier (PA) with constant output power across the entire band. A new topology based on the impedance transformation of transmission lines was adopted as the…
The patterning toolbox FIB-o-mat: Exploiting the full potential of focused helium ions for nanofabrication
/forschung/publikationen/the-patterning-toolbox-fib-o-mat-exploiting-the-full-potential-of-focused-helium-ions-for-nanofabrication
Focused beams of helium ions are a powerful tool for high-fidelity machining with spatial precision below 5 nm. Achieving such a high patterning precision over large areas and for different…
Electrical and optical characteristics of highly transparent MOVPE-grown AlGaN-based tunnel heterojunction LEDs emitting at 232 nm
/forschung/publikationen/electrical-and-optical-characteristics-of-highly-transparent-movpe-grown-algan-based-tunnel-heterojunction-leds-emitting-at-232-nm
We present the growth and electro-optical characteristics of highly transparent AlGaN-based tunnel heterojunction light-emitting diodes (LEDs) emitting at 232 nm entirely grown by metalorganic…
Comb injection into a single-mode laser
/forschung/publikationen/comb-injection-into-a-single-mode-laser
Temporally- and spectrally-resolved phase and intensity emission characteri-zation of amplitude-modulated optical frequency comb generation and phase noise transfer of an initially single mode laser…
Laser Diodes as Reliable Pump Source for Space-Borne Methane Remote Sensing Lidar System
/forschung/publikationen/laser-diodes-as-reliable-pump-source-for-space-borne-methane-remote-sensing-lidar-system
Laser diode minibars for QCW pumping Nd:YAG at 63 W were developed for the satellite MERLIN and subjected to accelerated life test. Evaluating 320 single emitters indicates a reliability of…
Ultra-narrow linewidth GaAs-based DBR Lasers
/forschung/publikationen/ultra-narrow-linewidth-gaas-based-dbr-lasers-1
We present a novel approach for GaAs-based DBR diode lasers with an extended cavity. The developed chips exhibit a record small 3 dB linewidth of 25 kHz @ 1 ms at the wavelength…
Wedged Nd:YVO4 crystal for wavelength tuning of monolithic passively Q-switched picosecond microchip lasers
/forschung/publikationen/wedged-ndyvo4-crystal-for-wavelength-tuning-of-monolithic-passively-q-switched-picosecond-microchip-lasers
We present a monolithic integrated passively Q-switched sub-150 ps microchip laser at 1064 nm with a wedged Nd:YVO4 crystal operating up to a repetition rate of 1 MHz. The wedge…
A Highly Linear Dual-Stage Amplifier With Beyond 1.75-THz Gain-Bandwidth Product
/forschung/publikationen/a-highly-linear-dual-stage-amplifier-with-beyond-175-thz-gain-bandwidth-product
This work reports a multipurpose highly linear ultrawideband amplifier with a gain-bandwidth product (GBP) of 1.75 THz, the highest reported in any monolithic microwave integrated circuit (MMIC)…