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Quantification of losses in bent waveguides within DBR-RW laser diodes emitting at 785 nm
/forschung/publikationen/quantification-of-losses-in-bent-waveguides-within-dbr-rw-laser-diodes-emitting-at-785-nm
An experimental study of straight and bent distributed Bragg reflector (DBR) ridge waveguide (RW) lasers and Fabry–Pérot (FP) RW lasers emitting at 785 nm is presented. To determine the losses…
FBH, TRUMPF, LayTec, and Finetech Unite to Develop Cost-Effective High-Power Diode Laser Stacks
/media-center/medienschau/fbh-trumpf-laytec-and-finetech-unite-to-develop-cost-effective-high-power-diode-laser-stacks
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH), an application-oriented research institute in the fields of high-frequency electronics, photonics and quantum physics, has…
In vivo detection of changes in cutaneous carotenoids after chemotherapy using shifted excitation resonance Raman difference and fluorescence spectroscopy
/forschung/publikationen/in-vivo-detection-of-changes-in-cutaneous-carotenoids-after-chemotherapy-using-shifted-excitation-resonance-raman-difference-and-fluorescence-spectroscopy
Background: Various cutaneous toxicities under chemotherapy indicate a local effect of chemotherapy by secretion after systemic application. Here, changes in the fluorescence and Raman spectral…
Shifted-excitation Raman difference spectroscopy for the detection of SERS-encoded gold nanostar probes
/forschung/publikationen/shifted-excitation-raman-difference-spectroscopy-for-the-detection-of-sers-encoded-gold-nanostar-probes
In vivo applications of surface-enhanced Raman spectroscopy (SERS) have limited sensitivity due to the intense background signal from real-life complex samples such as plants and tissues. To overcome…
Kilowatt Power Amplifier With Improved Power Back-Off Efficiency for Cyclotron Application
/forschung/publikationen/kilowatt-power-amplifier-with-improved-power-back-off-efficiency-for-cyclotron-application
This article presents a highly efficient solid-state kilowatt level power amplifier implemented in laterally-diffused metal-oxide semiconductor (LDMOS) technology in a single-ended architecture. It…
An efficient drain-lag model for microwave GaN HEMTs based on ASM-HEMT
/forschung/publikationen/an-efficient-drain-lag-model-for-microwave-gan-hemts-based-on-asm-hemt
Large-signal modeling of Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) demands a proper description of trapping effects. In this paper, a new, simplified yet accurate…
SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p-n diodes
/forschung/publikationen/snobeta-ga2o3-heterojunction-field-effect-transistors-and-vertical-p-n-diodes
In this work, we report on the realization of SnO/β-Ga2O3 heterojunction vertical diodes and lateral field-effect transistors for power electronic applications. The p-type semiconductor SnO is…
635 nm tapered diode lasers with more than 2000 h operation at 500 mW output power
/forschung/publikationen/635-nm-tapered-diode-lasers-with-more-than-2000-h-operation-at-500-mw-output-power
635 nm tapered diode lasers with more than 2000 h operation at 500 mW output power K. Paschke, G. Blume, H. Wenzel, J. Pohl, M. Matalla, D. Feise, P. Ressel,…
Comparison of the electro-optical, spectral, and beam parameters of 785 nm DBR tapered lasers with different grating lengths
/forschung/publikationen/comparison-of-the-electro-optical-spectral-and-beam-parameters-of-785-nm-dbr-tapered-lasers-with-different-grating-lengths
Comparison of the electro-optical, spectral, and beam parameters of 785 nm DBR tapered lasers with different grating lengths B. Sumpf, L.S. Theurer, M. Maiwald, A. Müller,…
Investigation of astigmatism in tapered edge emitting diode amplifiers at 980 nm
/forschung/publikationen/investigation-of-astigmatism-in-tapered-edge-emitting-diode-amplifiers-at-980-nm
Investigation of astigmatism in tapered edge emitting diode amplifiers at 980 nm P. Hildenstein, N. Werner, K. Paschke, and G. Tränkle Ferdinand-Braun-Institut gGmbH,…