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Internally wavelength stabilized GaAs-based diode lasers with epitaxially-stacked multiple active regions and tunnel junctions for LiDAR applications
/forschung/publikationen/internally-wavelength-stabilized-gaas-based-diode-lasers-with-epitaxially-stacked-multiple-active-regions-and-tunnel-junctions-for-lidar-applications
We present a bipolar-cascade distributed-Bragg reflector laser emitting near 905 nm with a high slope efficiency. The wavelength stabilization by a surface grating was achieved by placing three…
Efficiency optimization of high-power GaAs lasers by balancing confinement and threshold
/forschung/publikationen/efficiency-optimization-of-high-power-gaas-lasers-by-balancing-confinement-and-threshold
Studies balancing modal gain (confinement) and facet reflectivity in high power 940 nm lasers using extreme-triple-asymmetric epitaxial designs enable > 70% efficiency at 12 W…
Narrow lateral far field divergence obtained with spatially modulated broad-area lasers
/forschung/publikationen/narrow-lateral-far-field-divergence-obtained-with-spatially-modulated-broad-area-lasers
A laser design combining longitudinal-lateral gain-loss modulation with additional phase tailoring is presented. Under pulsed operation simulations predict a single-lobed far field angle of…
Theoretical Study of the Behavior of a DBR Laser Subject to External Optical Feedback
/forschung/publikationen/theoretical-study-of-the-behavior-of-a-dbr-laser-subject-to-external-optical-feedback-1
We report results of the theoretical study of the dynamic properties of distributed Bragg reflector (DBR) lasers subject to an external optical feedback provided by a longdistance mirror. We adapt…
Opticlock: Transportable and easy-to-operate optical single-ion clock
/forschung/publikationen/opticlock-transportable-and-easy-to-operate-optical-single-ion-clock
We report on a transportable and easy-to-operate optical clock utilizing the 2S1/2 - 2D3/2 transition of a single trapped 171Yb+ ion at 436 nm. Developed within a pilot project for quantum…
Compact Stacked Rugged GaN Low-Noise Amplifier MMIC
/forschung/publikationen/compact-stacked-rugged-gan-low-noise-amplifier-mmic
Rugged GaN HEMT LNAs are well established components for high-performance microwave receivers. In a previous work, we introduced the concept of a stacked circuit topology, which allows for a power…
Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing
/forschung/publikationen/role-of-oxygen-diffusion-in-the-dislocation-reduction-of-epitaxial-aln-on-sapphire-during-high-temperature-annealing
Recovery of epitaxial AlN films on sapphire at high temperatures is now an established process to produce pseudo-substrates with high crystalline perfection, which can be used to grow epitaxial…
Switching behavior and dynamic on-resistance of lateral β-Ga2O3 MOSFETs up to 400 V
/forschung/publikationen/switching-behavior-and-dynamic-on-resistance-of-lateral-beta-ga2o3-mosfets-up-to-400nbspv-1
This paper studies switching behavior and dynamic on-state characteristics of lateral 10 mm depletion-mode β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs). Improvements…
An X- to Ka-band Single-Pole-Double-Throw Switch with Good Power Handling Capability
/forschung/publikationen/an-x-to-ka-band-single-pole-double-throw-switch-with-good-power-handling-capability-1
In this paper, we present a single-pole-double-throw (SPDT) switch design covering X- to Ka-band using series-shunt topology. The stacked-FET configuration was adopted for the series- and shunt-arms…
Atomic surface control of Ge(100) in MOCVD reactors coated with (Ga)As residuals
/forschung/publikationen/atomic-surface-control-of-ge100-in-mocvd-reactors-coated-with-gaas-residuals
Heteroepitaxy of planar, low-defect III-V semiconductor layers on Ge(100) requires a single-domain substrate surface, where dimer rows are aligned in parallel on atomically well-ordered terraces,…