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Novel 1064 nm DBR lasers combining active layer removal and surface gratings
/forschung/publikationen/novel-1064-nm-dbr-lasers-combining-active-layer-removal-and-surface-gratings
The fabrication and characterisation details of novel distributed Bragg reflector (DBR) diode lasers emitting around 1064 nm are presented here. The AlGaAs epitaxial layer stack used here allows…
A Highly Linear Dual-Stage Amplifier With Beyond 1.75-THz Gain-Bandwidth Product
/forschung/publikationen/a-highly-linear-dual-stage-amplifier-with-beyond-175-thz-gain-bandwidth-product-1
This work reports a multipurpose highly linear ultrawideband amplifier with a gain-bandwidth product (GBP) of 1.75 THz, the highest reported in any monolithic microwave integrated circuit (MMIC)…
Digital PA Modulator with Phase Shifter for Phased Array Transmitters
/forschung/publikationen/digital-pa-modulator-with-phase-shifter-for-phased-array-transmitters
This paper presents a modulator for fully digital transmitter chains which allows to realize time delays with ps accuracy between several transmitter branches, as needed for phased array antennas in…
A 26 GHz GaN-MMIC with Integrated Switches for Discrete Level Supply Modulation
/forschung/publikationen/a-26-ghz-gan-mmic-with-integrated-switches-for-discrete-level-supply-modulation
A GaN-MMIC power amplifier (PA) for 5G applications in the 24 - 28 GHz frequency range with integrated multi-supply switches is presented. It is a three-stage conceptual design developed for the…
Characterization of the Impairment and Recovery of GaN-HEMTs in Low-Noise Amplifiers under Input Overdrive
/forschung/publikationen/characterization-of-the-impairment-and-recovery-of-gan-hemts-in-low-noise-amplifiers-under-input-overdrive
This paper reports an investigation of the dynamic behavior of a GaN-HEMT, which is subjected to high reverse gate voltage pulses. These stress conditions are typical for robust LNAs under RF input…
Modeling Base-Collector Heterojunction Barrier Effect in InP DHBTs for Improved Large Signal Performance
/forschung/publikationen/modeling-base-collector-heterojunction-barrier-effect-in-inp-dhbts-for-improved-large-signal-performance
In this paper, the large-signal model of InP double heterojunction bipolar transistors (DHBTs) is improved by modeling the soft-knee effect. The soft-knee effect in the DHBTs is explained by the…
High Conversion Gain Up-Converter with +5 dBm OP1dB in InP DHBT Technology for Ultra Capacity Wireless Applications
/forschung/publikationen/high-conversion-gain-up-converter-with-5-dbm-op1db-in-inp-dhbt-technology-for-ultra-capacity-wireless-applications
A fundamental frequency up-converter for ultra-capacity wireless applications with high conversion gain is presented, realized as double-balanced Gilbert cell mixer using an 800 nm transferred…
Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs
/forschung/publikationen/skin-tolerant-inactivation-of-multiresistant-pathogens-using-far-uvc-leds
Multiresistant pathogens such as methicillin-resistant Staphylococcus aureus (MRSA) cause serious postoperative infections. A skin tolerant far-UVC (< 240 nm) irradiation system for…
Comparison of Ultraviolet B Light-Emitting Diodes with Single or Triple Quantum Wells
/forschung/publikationen/comparison-of-ultraviolet-b-light-emitting-diodes-with-single-or-triple-quantum-wells
Light-emitting diodes (LEDs) with an emission wavelength of 310 nm containing either a single or a triple quantum well are compared regarding their efficiency and long-term stability. In…
Spatially modulated broad-area lasers for narrow lateral far-field divergence
/forschung/publikationen/spatially-modulated-broad-area-lasers-for-narrow-lateral-far-field-divergence-1
A novel laser design is presented that combines a longitudinal-lateral gain-loss modulation with an additional phase tailoring achieved by etching rectangular trenches. At 100 A pulsed…