EWMOVPE 2013
15. europäischer Workshop zu metallorganischer Gasphasenepitaxie. Das FBH ist mit mehreren Posterbeiträgen vertreten:
- Predominant formation of a-plane (Al,Ga)N layers on patterned c-plane sapphire using HVPE
- Defect structure and compositional homogeneity of (Al,Ga)N layers on laterally overgrown AlN/sapphire templates
- Linear thermal expansion coefficient determination using in-situ curvature and temperature dependent X-ray diffraction measurements applied to MOVPE-grown AlGaAs
- DFB laser diodes emitting at 760 nm, grown in a 2-step epitaxy process
- Epitaxial optimization of AlGaInP laser diodes at 633 nm
Konferenz: 02.-05.06.2013 Aachen