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Growth monitoring of GaAsSb:C/InP heterostructures with reflectance anisotropy spectroscopy
/forschung/publikationen/growth-monitoring-of-gaassbcinp-heterostructures-with-reflectance-anisotropy-spectroscopy
Using time-resolved reflectance anisotropy spectroscopy (RAS) we studied insitu the dynamics of surface processes of Sb-covered GaAs(100) and InP(100) under metalorganic vapour-phase epitaxy…
Use of SiC band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE
/forschung/publikationen/use-of-sic-band-gap-temperature-dependence-for-absolute-calibration-of-emissivity-corrected-pyrometers-in-iii-nitride-movpe
In this paper we will demonstrate a new method for temperature calibration by using the in-situ measured band-gap shift of SiC in conjunction with real-time emissivity corrected pyrometry. The…
Defect study of MOVPE-grown InGaP layers on GaAs
/forschung/publikationen/defect-study-of-movpe-grown-ingap-layers-on-gaas
MOVPE-grown n-type GaAs/InGaP/GaAs structures with different GaAs cap layer thicknesses were studied by deep-level transient spectroscopy. An electron trap E1 with a thermal activation energy of…
Abstrahlungsverluste bei Bragg-Gitter-Beugung höherer Ordnung in Wellenleitern
/forschung/publikationen/abstrahlungsverluste-bei-bragg-gitter-beugung-hoeherer-ordnung-in-wellenleitern
Bragg-Gitter in Wellenleitern mit Gitterkonstanten > 800 nm können technologisch vorteilhaft mit Steppern hergestellt werden, führen aber zu einem Design unter Ausnutzung…
100W-output power from passively cooled laser bar with 30 % filling factor
/forschung/publikationen/100w-output-power-from-passively-cooled-laser-bar-with-30nbsp-filling-factor
940 nm laser bars with optimised layer structures will be reported. 100 W output power, wall plug efficiency above 60 % and a vertical divergence of 27° FWHM were achieved despite…
High-power, high-efficient 1150 nm quantum well laser
/forschung/publikationen/high-power-high-efficient-1150nbspnm-quantum-well-laser
An efficient laser structure was realized using highly strained InGaAs quantum wells and thick GaAs waveguide layers. A low divergence of 20° FWHM and reliable 5 W output power from a…
Nearly-diffraction limited 980 nm tapered diode lasers with an output power of 6.7 W
/forschung/publikationen/nearly-diffraction-limited-980nbspnm-tapered-diode-lasers-with-an-output-power-of-67nbspw
High-power tapered diode lasers emitting at 980 nm with electrically separated straight and tapered sections have been fabricated. A high beam quality at an output power of 6.7 W was…
Investigation of Breakdown and DC Behavior in HBTs With (Al,Ga)As Collector Layer
/forschung/publikationen/investigation-of-breakdown-and-dc-behavior-in-hbts-with-algaas-collector-layer
We report on the realization of an InGaP-GaAs-based double heterojunction bipolar transistor with high breakdown voltages of up to 85 V using an Al0.2Ga0.8As collector. These results were…
A GaAs-HBT Broadband Amplifier with Near-fT Cut-off Frequency for High-Bitrate Transmission
/forschung/publikationen/a-gaas-hbt-broadband-amplifier-with-near-ft-cut-off-frequency-for-high-bitrate-transmission
A broadband amplifier for high-bitrate transmission is presented, using a standard GaAs-HBT process with fT and fmax of 36 and 170 GHz, respectively, at the operating bias point. The design…
Investigation of Thermal Crunching Effects in Fishbone-Type Layout Power GaAs-HBTs
/forschung/publikationen/investigation-of-thermal-crunching-effects-in-fishbone-type-layout-power-gaas-hbts
Thermal current crunching in power HBTs is investigated by numerical simulation. Compact electro-thermal models are connected in parallel, thermal interaction is accounted for by a thermal resistance…