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High electric field performance of Al0.3Ga0.7As/GaAs and Al0.3Ga0.7As/GaAs/In0.3Ga0.7As quantum well micro-Hall devices

V.P. Kunetsa, W. Hoerstela, H. Kostialb, H. Kisselc , U. Müllera, G.G. Tarasovd, Yu.I. Mazure, Z.Ya. Zhuchenkod, W.T. Masselinka

Published in:

Sens. Actuators, A, vol. 101, pp. 62-68 (2002).

Abstract:

Quantum well micro-Hall devices based on uniformly Si-doped Al0.3Ga0.7As/GaAs and Si-δ-doped Al0.3Ga0.7As/GaAs/In0.3Ga0.7As heterostructures are investigated as function of electric field and compared in terms of sensitivity and noise properties. The data show that at high electric fields, doped-channel quantum well devices are advantageous over high mobility structures and that the use of pseudomorphic InGaAs results in better performance than does GaAs. A maximal signal-to-noise sensitivity (SNS) of 138 db T-1 is achieved in a 10 µm x 10 µm device at 300 K, at frequency of 100 kHz and bandwidth of 1 Hz. This performance corresponds to a lowest detection limit of 127 nT Hz1/2, with no degradation for electric fields up to 2.4 kV cm-1; these values represent the best reported at such high electric fields. Furthermore, our results suggest that a signal-to-noise sensitivity of 160 db T-1 and a lowest detection limit of 10 nT is achievable in doped-channel structures.

a Department of Physics, Humboldt-Universität zu Berlin, Invalidenstraße 110, 10115 Berlin, Germany
b Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
c Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Str. 11, 12489 Berlin, Germany
d Institute of Semiconductor Physics, National Academy of Sciences, Prospect Nauki 41, 03028 Kiew, Ukraine
e Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA

Keywords:
Hall devices; Noise; δ-Doped quantum well

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