T.K. Sharma, M. Zorn , F. Bugge, R. Hülsewede, G. Erbert, and M. Weyers

Published in:

IEEE Photon. Technol. Lett., vol. 14, no. 7, pp. 887-889 (2002).

Abstract:

In this letter, high-power highly strained In_xGa_1-xAs quantum-well lasers operating at 1.2 µm are demonstrated. The edge emitting broad area (BA) laser diode structures are grown by metal organic vapor phase epitaxy at low growth temperatures using trimethylgallium, trimethylindium, and arsine sources. In the laser structure, an InGaAs QW is sandwiched between the GaAs waveguide and AlGaAs cladding layers. The operating wavelength for the laser diode at room temperature (20 °C) is about 1206 nm, which redshifts to 1219 nm at 46 °C. The transparency current density for the BA laser diodes is as low as 52 A/cm² and the characteristic temperature value is 76 K. High-power laser operation in pulse mode (about 1.6 W) at room temperature was achieved.

Index Terms:
Highly strained InGaAs quantum-well laser, MAN, MOVPE, WAN.

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