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Publikationen
/forschung/publikationen/investigation-of-short-term-current-gain-stability-of-gainpgaas-hbts-grown-by-movpe
High-power 980 nm quantum dot broad area lasers
/forschung/publikationen/high-power-980nbspnm-quantum-dot-broad-area-lasers
High-power quantum dot broad area lasers emitting at 980 nm are presented. Continuous-wave output powers of 4.3 W from a 50 µm stripe width laser and of 6.3 W from a 100 µm…
Green's Function Based Simulation of the Optical Spectrum of Multisection Lasers
/forschung/publikationen/greens-function-based-simulation-of-the-optical-spectrum-of-multisection-lasers
A new approach for the calculation of the optical spectrum of semiconductor lasers is presented. It is based on a solution of the inhomogeneous coupled wave equations using the Greens's function…
Nonlinear Properties of Tapered Laser Cavities
/forschung/publikationen/nonlinear-properties-of-tapered-laser-cavities
The nonlinear phenomena accompanying the process of light generation in high-power tapered semiconductor lasers are studied using a combination of simulation and experiment. Optical pumping,…
Modeling and Measurements of the Radiative Characteristics of High-Power α-DFB Lasers
/forschung/publikationen/modeling-and-measurements-of-the-radiative-characteristics-of-high-power-alpha-dfb-lasers
A new above-threshold model of α-DFB lasers is presented. It is based on a generalized beam-propagation method and takes into account spatial hole burning and self-heating effects. Up to…
Publikationen
/forschung/publikationen/grazing-incidence-diffraction-study-of-strain-modulated-single-quantum-well-nanostructures
Interplay of Coulomb and nonparabolicity effects in the intersubband absorption of electrons and holes in quantum wells
/forschung/publikationen/interplay-of-coulomb-and-nonparabolicity-effects-in-the-intersubband-absorption-of-electrons-and-holes-in-quantum-wells
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Interdiffusion in highly strained InGaAs-QWs for high power laser diode applications
/forschung/publikationen/interdiffusion-in-highly-strained-ingaas-qws-for-high-power-laser-diode-applications
With the aim of realizing laser diodes on GaAs with an emission wavelength above 1120nm, we have studied the indium incorporation behavior into highly strained pseudomorphic InGaAs-QWs grown by…
Growth monitoring of GaAsSb:C/InP heterostructures with reflectance anisotropy spectroscopy
/forschung/publikationen/growth-monitoring-of-gaassbcinp-heterostructures-with-reflectance-anisotropy-spectroscopy
Using time-resolved reflectance anisotropy spectroscopy (RAS) we studied insitu the dynamics of surface processes of Sb-covered GaAs(100) and InP(100) under metalorganic vapour-phase epitaxy…
Use of SiC band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE
/forschung/publikationen/use-of-sic-band-gap-temperature-dependence-for-absolute-calibration-of-emissivity-corrected-pyrometers-in-iii-nitride-movpe
In this paper we will demonstrate a new method for temperature calibration by using the in-situ measured band-gap shift of SiC in conjunction with real-time emissivity corrected pyrometry. The…