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Patente

Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1-xAs growth in MOVPE

K. Haberlanda,b, A. Kaluzac, M. Zornd , M. Pristovseka, H. Hardtdegenc, M. Weyersd, J.-T. Zettlera,b, and W. Richtera

Published in:

J. Cryst. Growth, vol. 240, pp. 87-97 (2002).

Abstract:

In this paper we report a novel technique, based on optical measurements, to measure the true temperature of the wafer surface during epitaxial growth. It will be shown that this temperature can deviate considerably from the susceptor temperature measured with thermocouples or pyrometers. For this purpose we employed combined in-situ reflectance anisotropy spectroscopy and spectroscopic reflectance measurements in a number of different metal-organic vapor phase epitaxy (MOVPE) reactors. Measurements have been performed on rotating and non-rotating samples during growth of GaAs, AlAs and AlxGa1-xAs. We demonstrate that in a single growth run the reading of a conventional thermocouple can be calibrated to the true wafer temperature, the growth rate can be determined and process calibration for the AlGaAs composition can be established.

a Technische Universität Berlin, Institut für Festkörperphysik, Sekr. PN 6-1, Hardenbergstr. 36, D-10623 Berlin, Germany
b LayTec Gesellschaft für in-situ und Nano-Sensorik mbH, Helmholtzstr. 13-14, D-10587 Berlin, Germany
c Forschungszentrum Jülich, Institut für Schicht- und Ionentechnik, D-52425 Jülich, Germany
d Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany

Keywords:
A1. Characterization; A1. In-situ monitoring; A1. Wafer temperature; A1. Ternary composition; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting aluminium compounds; B2. Semiconducting gallium compounds

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