M. Rudolph, R. Doerner, K. Beilenhoff, P. Heymann

Published in:

IEEE Trans. Microwave Theory Tech., vol. 50, pp. 1747-1751 (2002).

Abstract:

The base-collector capacitance and the collector transit-time in GaAs-based heterojunction bipolar transistors depend not only on base-collector voltage, but also on collector current. This has to be taken into account in a large-signal model. However, since collector transit-time and capacitance are both caused by the charge stored in the collector space-charge region, it is not possible to model them independently of each other. This paper investigates the interrelation between collector capacitance and transit-time due to transcapacitance effects, and presents an analytical unified description for both quantities, that is derived from measurement-extracted small-signal equivalent circuits. The model is verified by comparison of simulation and measurement data

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