Impact of in-situ TRL Reference Impedance Determination on Parameter Extraction
A. Rumiantsev1, R. Doerner2, and F. Lenk3
Published in:
42nd European Microwave Conf. (EuMC 2012), Amsterdam, The Netherlands, Oct. 28 - Nov. 2, pp. 593-596 (2012).
Abstract:
This paper investigates the impact of possible parameter extraction errors caused by inaccurate definition of the calibration reference impedance of in-situ multiline TRL. Two calibration sets implemented on GaAs and Si/SiGe:C wafer processes were quantitatively analyzed. Obtained results demonstrated that for most practical cases, the desired 5%-level of confidence of extracted parameters of high-reflective devices can easily be achieved without additional efforts. Thus, implementation of the in-situ TRL into a characterization workflow of high-performance microwave devices can be significantly simplified.
1 Cascade Microtech GmbH, Sacka, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
3 Hochschule Lausitz (FH), Senftenberg, Germany
Keywords:
S-parameter; calibration; on-wafer measurements; HBT.
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