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Topography of (2021) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy
/forschung/publikationen/topography-of-2021-algan-gan-and-ingan-layers-grown-by-metal-organic-vapor-phase-epitaxy
The growth of AlGaN, GaN and InGaN layers on (2021) GaN substrates was investigated by metal- organic vapor phase epitaxy. All layers exhibit undulations along [1014] with a period length between…
HVPE of AlxGa1-xN layers on planar and trench patterned sapphire
/forschung/publikationen/hvpe-of-alxga1-xn-layers-on-planar-and-trench-patterned-sapphire
The growth of Al0.45Ga0.55N layers of 5 mm thickness on planar and trench patterned (0001) sapphire substrates by hydride vapour phase epitaxy (HVPE) is investigated. The introduction of an AlN…
Analysis of doping induced wafer bow during GaN:Si growth on sapphire
/forschung/publikationen/analysis-of-doping-induced-wafer-bow-during-gansi-growth-on-sapphire
In-situ curvature measurements were employed to quantify stress generation during metalorganic vapor phase epitaxy growth of Si-doped GaN sandwiched between undoped GaN layers. It is shown that the…
Spacer and well pumping of InGaN vertical cavity semiconductor lasers with varying number of quantum wells
/forschung/publikationen/spacer-and-well-pumping-of-ingan-vertical-cavity-semiconductor-lasers-with-varying-number-of-quantum-wells
We have investigated the dependence of the threshold pump power and slope efficiency of 415nm (In)GaN vertical cavity surface emitting lasers on the wavelength of the pump source and the number of…
Preparation and atomic structure of reconstructed (0001) InGaN surfaces
/forschung/publikationen/preparation-and-atomic-structure-of-reconstructed-0001-ingan-surfaces
The preparation and surface structure of high quality group-III-polar (0001) InGaN layers grown by metal-organic vapor phase epitaxy have been investigated. In order to obtain a clean and…
Emulation of the operation and degradation of high-power laser bars using simulation tools
/forschung/publikationen/emulation-of-the-operation-and-degradation-of-high-power-laser-bars-using-simulation-tools
We report on the simulation of high-power laser bars and the emulation of their ageing behaviour, using simulation tools originally developed for single emitter laser diodes. Simulations of a…
Modular Assembly of Diode Lasers in a Compact and Reliable Setup for a Wide Range of Applications
/forschung/publikationen/modular-assembly-of-diode-lasers-in-a-compact-and-reliable-setup-for-a-wide-range-of-applications
In the development process towards an integration of laser systems into compact modules many key points can be simulated. Yet, a reliable and stable testing environment is needed for a deeper…
Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device
/forschung/publikationen/continuous-wave-terahertz-radiation-from-an-inasgaas-quantum-dot-photomixer-device
Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region…
Modulated Epitaxial Lateral Overgrowth of AlN for Efficient UV LEDs
/forschung/publikationen/modulated-epitaxial-lateral-overgrowth-of-aln-for-efficient-uv-leds
A reduction of the threading dislocation density in AlN layers on a sapphire from 1010 cm-2 to 109 cm-2 was achieved by applying epitaxial lateral overgrowth (ELO) of patterned AlN and…
Four-wave interference and perfect blaze
/forschung/publikationen/four-wave-interference-and-perfect-blaze
The recently calculated high diffraction efficiencies for TE- and TM-polarized light (perfect blaze) for echelette gratings are explained by four-wave interference, which is formed as a double…