T. Jensen, T. Kraemer, T. Al-Sawaf, V. Krozer, W. Heinrich and G. Tränkle

Published in:

42nd European Microwave Conf. (EuMC 2012), Amsterdam, The Netherlands, Oct. 28 - Nov. 2, pp. 1087-1090 (2012).

Abstract:

This paper reports results on a transferred-substrate InP heterojunction bipolar-transistor technology for high-frequency power stages. The basic building block is a 2-finger transistor with f_T and f_max values of 376 GHz and 385 GHz, respectively, at an emitter size of 0.8 × 5 µm². The transistors demonstrate more than 7 dB of gain at 96 GHz with good power densities of better than 3.7 mW/µm². For a 4-finger transistor, f_T and fmax reduce to 302/325 GHz while doubling the power. Wband amplifiers based on a single 2-finger transistor have reached a saturated output power of 14.8 dBm at 77 GHz with more than 10 dB return loss on input and output. The results confirm that the transistors are suitable for compact circuit design with minimum inter-stage matching.

Keywords:

InP heterojunction bipolar transistors, Wband, MMIC, integrated circuit design.

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