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Characterization and optimization of 2-step MOVPE growth for single-mode DFB or DBR laser diodes
/forschung/publikationen/characterization-and-optimization-of-2-step-movpe-growth-for-single-mode-dfb-or-dbr-laser-diodes
We have studied the MOVPE regrowth of AlGaAs over a grating for GaAs-based laser diodes with an internal wavelength stabilisation. Growth temperature and aluminium concentration in the regrown layers…
Growth and characterization of heavily selenium doped GaAs using MOVPE
/forschung/publikationen/growth-and-characterization-of-heavily-selenium-doped-gaas-using-movpe
High n-type doping in GaAs using silicon suffers from its amphoteric character and free carrier concentrations are practically limited to 3x1018cm-3. Se as group VI element should not be amphoteric…
Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements
/forschung/publikationen/comparative-study-of-algangan-hemts-robustness-versus-buffer-design-variations-by-applying-electroluminescence-and-electrical-measurements
By means of step stressing tests on AlGaN/GaN HEMTs the robustness properties of devices fabricated on wafers with different buffer designs have been compared to each other (standard UID GaN buffer…
16 W output power by high-efficient spectral beam combining of DBR-tapered diode lasers
/forschung/publikationen/16-w-output-power-by-high-efficient-spectral-beam-combining-of-dbr-tapered-diode-lasers
Up to 16 W output power has been obtained using spectral beam combining of two 1063 nm DBR-tapered diode lasers. Using a reflecting volume Bragg grating, a combining efficiency as high as…
Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser
/forschung/publikationen/pulse-repetition-rate-up-to-92nbspghz-or-pulse-duration-shorter-than-110nbspfs-from-a-mode-locked-semiconductor-disk-laser
A semiconductor disk laser based on an InGaAs/AlGaAs quantum-well gain medium was mode-locked by a fast semiconductor saturable absorber mirror. By high-order harmonic mode-locking a 92 GHz…
Growth of AlGaN and AlN on patterned AlN/sapphire templates
/forschung/publikationen/growth-of-algan-and-aln-on-patterned-alnsapphire-templates
Maskless epitaxial overgrowth of AlGaN on structured AlN templates was performed and the impact of stripe orientation on the lateral growth of AlGaN was studied. AlN/sapphire templates were patterned…
Optical polarization of UV-A and UV-B (In)(Al)GaN multiple quantum well light emitting diodes
/forschung/publikationen/optical-polarization-of-uv-a-and-uv-b-inalgan-multiple-quantum-well-light-emitting-diodes
The optical polarization of the in-plane emission of c-plane oriented (In)(Al)GaN multiple quantum well light emitting diodes in the spectral range from 288 nm to 386 nm has been investigated by…
Efficient high-power frequency doubling of distributed Bragg reflector tapered laser radiation in a periodically poled MgO-doped lithium niobate planar waveguide
/forschung/publikationen/efficient-high-power-frequency-doubling-of-distributed-bragg-reflector-tapered-laser-radiation-in-a-periodically-poled-mgo-doped-lithium-niobate-planar-waveguide
We report on efficient single-pass, high-power second-harmonic generation in a periodically poled MgO-doped LiNbO3 planar waveguide using a distributed Bragg reflector tapered diode laser as a pump…
GaN boules grown by high rate HVPE
/forschung/publikationen/gan-boules-grown-by-high-rate-hvpe
The most promising approach for GaN substrate fabrication on the base of HVPE consists in the growth of thick GaN crystals and subsequent cutting of these boules into slices followed by conventional…
1 W at 531 nm generated in a ppMgO:LN planar waveguide by means of frequency doubling of a DBR tapered diode laser
/forschung/publikationen/1nbspw-at-531nbspnm-generated-in-a-ppmgoln-planar-waveguide-by-means-of-frequency-doubling-of-a-dbr-tapered-diode-laser
In this work, we investigate experimentally second-harmonic generation (SHG) in a periodically poled 5 %mol MgO doped LiNbO3 (ppMgO:LN) planar waveguide. As a pump source a 6 mm long distributed…