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Porous Nanostructures and Thermoelectric Power Measurement of Electro-Less Etched Black Silicon
/forschung/publikationen/porous-nanostructures-and-thermoelectric-power-measurement-of-electro-less-etched-black-silicon
We report the morphology evolution of porous silicon nanostructures and thermoelectric characterization of silicon nanowires (SiNWs) of Electro-Less Etched (ELE) black silicon. Along the axial…
Passively mode-locked 1 GHz MOPA system generating sub-500-fs pulses after external compression
/forschung/publikationen/passively-mode-locked-1nbspghz-mopa-system-generating-sub-500-fs-pulses-after-external-compression
We compared the performance of DQW and TQW edge-emitters in a passively mode-locked 1GHz MOPA system at 1075 nm wavelength. Passive mode-locking is induced by applying a reverse DC voltage to…
Progress in High Brilliance Lasers
/forschung/publikationen/progress-in-high-brilliance-lasers
Increasing demands on brightness for laser applications is the driving force of research on high-power diode lasers. Status and current developments of monolithic und hybrid solutions for high…
Buried DFB gratings floating in AlGaAs with low oxygen contamination enable high power and efficiency DFB lasers
/forschung/publikationen/buried-dfb-gratings-floating-in-algaas-with-low-oxygen-contamination-enable-high-power-and-efficiency-dfb-lasers
We report a novel design and fabrication technique for buried overgrown DFB gratings floating in AlGaAs. In-situ etching enables low oxygen contamination and results in > 60% efficient and…
Diagnosing and addressing the limitations to lateral far field angle in high power broad-area diode lasers
/forschung/publikationen/diagnosing-and-addressing-the-limitations-to-lateral-far-field-angle-in-high-power-broad-area-diode-lasers
We show experimentally that thermal lensing largely determines the lateral mode properties of broad-area lasers. However, additional broadening is observed at high powers, which will limit how…
High-Power Distributed Feedback Lasers With Surface Gratings
/forschung/publikationen/high-power-distributed-feedback-lasers-with-surface-gratings
We present the results for high-power broad-area distributed feedback lasers with surface gratings of 80th, 135th, and 270th Bragg orders. A maximum output power of 11 W for a laser with 80th…
Off-state breakdown and dispersion optimization in AlGaN/GaN heterojunction field-effect transistors utilizing carbon doped buffer
/forschung/publikationen/off-state-breakdown-and-dispersion-optimization-in-algangan-heterojunction-field-effect-transistors-utilizing-carbon-doped-buffer
An example of GaN buffer structure optimization in AlGaN/GaN heterojunction field-effect transistors is demonstrated. Transistors fabricated on four epitaxial structures with buffer consisting of…
Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors
/forschung/publikationen/random-telegraph-signal-noise-in-gate-current-of-unstressed-and-reverse-bias-stressed-algangan-high-electron-mobility-transistors
Random telegraph signal (RTS) fluctuations with relative amplitude up to 50% are observed in forward and reverse gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility…
Experimental and theoretical study of finite-aperture tapered unstable resonator lasers
/forschung/publikationen/experimental-and-theoretical-study-of-finite-aperture-tapered-unstable-resonator-lasers
We present experimental and theoretical results of a novel finite-aperture tapered unstable resonator laser under pulsed and CW operations. At a current of 16 A an output power of about…
Catastrophic optical bulk damage in InP 7xx emitting quantum dot diode lasers
/forschung/publikationen/catastrophic-optical-bulk-damage-in-inp-7xx-emitting-quantum-dot-diode-lasers
Catastrophic optical bulk damage occurs in broad-area MOCVD-grown InP/(Al)GaInP 7xx emitting quantum dot diode lasers operated at high power with single, high-current pulses of 5-20 A, in…