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Single- and double-heterostructure GaN-HEMTs devices for power switching applications
/forschung/publikationen/single-and-double-heterostructure-gan-hemts-devices-for-power-switching-applications
This paper reports on a detailed characterization of single- (SH) and double-heterostructure (DH) GaNbased HEMTs developed for the employment on power switching applications. DC, pulsed and breakdown…
Device breakdown and dynamic effects in GaN power switching devices: Dependencies on material properties and device design
/forschung/publikationen/device-breakdown-and-dynamic-effects-in-gan-power-switching-devices-dependencies-on-material-properties-and-device-design
High voltage GaN based transistors already showed promising device properties which makes them very attractive for future highly efficient power switching application. To further optimize device…
High-power low-divergence 1060 nm photonic crystal laser diodes based on quantum dots
/forschung/publikationen/high-power-low-divergence-1060-nm-photonic-crystal-laser-diodes-based-on-quantum-dots
GaAs-based photonic band crystal diode lasers with low vertical divergence and high output power have been designed and realised with a quantum dot active area at a wavelength of 1060 nm. Broad…
Hochrobuste rauscharme Verstärker in GaN-HEMT-Technologie
/forschung/forschungsnews/hochrobuste-rauscharme-verstaerker-in-gan-hemt-technologie
Die BTU Cottbus-Senftenberg und das FBH haben ein neues Konzept zum Schutz von rauscharmen Verstärkern vor zu hohen Eingangsleistungen entwickelt.
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/forschung/publikationen/threshold-voltage-engineering-in-gan-based-hfets-a-systematic-study-with-the-threshold-voltage-reaching-more-than-2-v
One of the key challenges for the adoption of gallium nitride (GaN)-based heterostructure field effect transistors (HFETs) in power-switching applications is obtaining enhancement mode behavior. A…
Tunable high-power narrow-spectrum external-cavity diode laser at 675 nm as a pump source for UV generation
/forschung/publikationen/tunable-high-power-narrow-spectrum-external-cavity-diode-laser-at-675nbspnm-as-a-pump-source-for-uv-generation
High-power narrow-spectrum diode laser systems based on tapered gain media in an external cavity are demonstrated at 675 nm. Two 2 mm long amplifiers are used, one with a 500 µm long…
Nearly Diffraction Limited Tapered Lasers at 675 nm with 1 W Output Power and Conversion Efficiencies above 30%
/forschung/publikationen/nearly-diffraction-limited-tapered-lasers-at-675nbspnm-with-1nbspw-output-power-and-conversion-efficiencies-above-30
High brightness, highly efficient tapered lasers emitting around 675 nm have been developed. The devices have a 500 µm long straight section and a 1500 µm long tapered section with a…
Improving the modulation efficiency of high-power distributed Bragg reflector tapered diode lasers
/forschung/publikationen/improving-the-modulation-efficiency-of-high-power-distributed-bragg-reflector-tapered-diode-lasers
Different measures to improve the modulation efficiency of a distributed Bragg reflector tapered diode laser emitting at 1060 nm were investigated. Due to the 6-mm long cavity, the device…
Biological effects of nitric oxide generated by an atmospheric pressure gas-plasma on human skin cells
/forschung/publikationen/biological-effects-of-nitric-oxide-generated-by-an-atmospheric-pressure-gas-plasma-on-human-skin-cells
Physical plasmas which contain a mixture of different radicals, charged species and UV-radiation, have recently found entry in various medical applications. Though first clinical trials are underway…
Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate
/forschung/publikationen/uniformity-of-the-wafer-surface-temperature-during-movpe-growth-of-gan-based-laser-diode-structures-on-gan-and-sapphire-substrate
Wafer bowing has a strong impact on the wavelength homogeneity of InGaN based light emitters due to the strong temperature dependence of the In incorporation.Using in-situ curvature measurements and…