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Degenerate four-wave interferences and perfect blaze
/forschung/publikationen/degenerate-four-wave-interferences-and-perfect-blaze
We present a simple model for understanding the perfect blaze for diffraction with echelle gratings. Littrow diffraction at grating profiles with rectangular apexangles implicates two pairs of…
Investigation of GaN-HEMT Based Switches for Hybrid Switching Amplifier Supply-Modulators
/forschung/publikationen/investigation-of-gan-hemt-based-switches-for-hybrid-switching-amplifier-supply-modulators
An investigation of GaN-HEMT based switching stages in hybrid switching amplifiers (HSA) for wide-bandwidth supply modulation of RF power amplifiers is presented. The HSA is designed for maximum 15 V…
Envelope Delta-Sigma-Modulated Voltage-Mode Class-S PA
/forschung/publikationen/envelope-delta-sigma-modulated-voltage-mode-class-s-pa
This paper reports on a digital transmitter architecture for the 450 MHz band using an envelope delta-sigma modulator realized in CMOS and a voltage-mode class-S PA based on GaN MMICs. The class-S PA…
Impact of in-situ TRL Reference Impedance Determination on Parameter Extraction
/forschung/publikationen/impact-of-in-situ-trl-reference-impedance-determination-on-parameter-extraction
This paper investigates the impact of possible parameter extraction errors caused by inaccurate definition of the calibration reference impedance of in-situ multiline TRL. Two calibration sets…
Discrete Tunable RF-Power GaN-BST Transistors
/forschung/publikationen/discrete-tunable-rf-power-gan-bst-transistors
In this work the current status of a novel Barium- Strontium-Titanate (BST) based discrete tunable RF-power GaN-HEMT transistor is presented. A p-design prototype is evaluated for tunable networks in…
Multifinger InP HBT's in Transferred-Substrate Technology for 100 GHz Power Amplifiers
/forschung/publikationen/multifinger-inp-hbts-in-transferred-substrate-technology-for-100-ghz-power-amplifiers
This paper reports results on a transferred-substrate InP heterojunction bipolar-transistor technology for high-frequency power stages. The basic building block is a 2-finger transistor with fT and…
Noise Modeling of GaN HEMT Devices
/forschung/publikationen/noise-modeling-of-gan-hemt-devices
GaN HEMT technology is increasingly used not only for power applications, but also for low-noise amplification. However, systematic assessment of the validity of common noise models like the Pucel…
Tunable RF GaN-Power Transistor Implementing Impedance Matching Networks Based on BST Thick Films
/forschung/publikationen/tunable-rf-gan-power-transistor-implementing-impedance-matching-networks-based-on-bst-thick-films
In this paper, a tunable power amplifier is demonstrated based on a GaN-transistor and a matching network based on Barium-Strontium-Titanate (BST) thick film technology. A single unit transistor cell…
Optimization of 780 nm DFB diode lasers for high-power narrow linewidth emission
/forschung/publikationen/optimization-of-780-nm-dfb-diode-lasers-for-high-power-narrow-linewidth-emission
We demonstrate the realization of narrow linewidth, high-power ridge waveguide DFB diode lasers emitting near 780 nm. The effects of the coupling coefficient, the laser chip length, and the…
Insitu Raman Setup for Deep Ocean Investigations Applying Two 1000 m Optical Fiber Cables and a 785 nm High Power Diode Laser
/forschung/publikationen/insitu-raman-setup-for-deep-ocean-investigations-applying-two-1000-m-optical-fiber-cables-and-a-785-nm-high-power-diode-laser
A laboratory Raman-set-up is used to demonstrate the feasibility of deep ocean measurements using 1000 m long low OH optical fibres for the excitation of the substances under study and the…