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Microstructure analysis of novel ternary NiSi2-xAlx silicide layers on Si(001) formed by solid-state reaction
/forschung/publikationen/microstructure-analysis-of-novel-ternary-nisi2-xalx-silicide-layers-on-si001-formed-by-solid-state-reaction
Phase formation due to annealing of Al/Ni (z:1) films on Si was investigated on the nanometer scale as a function of Al content and annealing temperature. An addition of Al to the Ni-Si system…
Growth of GaN boules via vertical HVPE
/forschung/publikationen/growth-of-gan-boules-via-vertical-hvpe
GaN boules were grown up to thicknesses of 6.3 mm via vertical HVPE on 2 in. GaN/sapphire templates. The usable boule length is limited by surface defects. Two different sub-surface…
Investigation of inversion domain formation in AlN grown on sapphire by MOVPE
/forschung/publikationen/investigation-of-inversion-domain-formation-in-aln-grown-on-sapphire-by-movpe
For certain growth conditions pronounced roughening has been observed for AlN layers grown on c-plane sapphire by metal-organic vapour phase epitaxy. TEM investigations revealed inversion domains…
Harmonically and fundamentally mode-locked InGaAs-AlGaAs disk laser generating pulse repetition rates in the 100 GHz or pulse durations in the 100 fs range
/forschung/publikationen/harmonically-and-fundamentally-mode-locked-ingaas-algaas-disk-laser-generating-pulse-repetition-rates-in-the-100nbspghz-or-pulse-durations-in-the-100nbspfs-range
Femtosecond mode-locked semiconductor disk lasers (SDLs) have the potential to replace rather complex, expensive laser systems and to establish ultrashort-pulse applications outside of scientific…
Impact of Buffer Composition on the Dynamic On-State Resistance of High-Voltage AlGaN/GaN HFETs
/forschung/publikationen/impact-of-buffer-composition-on-the-dynamic-on-state-resistance-of-high-voltage-algangan-hfets
Switching experiments with normally-off GaN-HFETs using a carbon-doped GaN buffer or an AlGaN buffer showed very different magnitudes of increased dynamic on-state resistance. The dynamic on-state…
Frequency-doubled diode laser for direct pumping of Ti:sapphire lasers
/forschung/publikationen/frequency-doubled-diode-laser-for-direct-pumping-of-tisapphire-lasers
A single-pass frequency doubled high-power tapered diode laser emitting nearly 1.3 W of green light suitable for direct pumping of Ti:sapphire lasers generating ultrashort pulses is…
10W-reliable 90µm-wide broad area lasers with internal grating stabilization
/forschung/publikationen/10w-reliable-90um-wide-broad-area-lasers-with-internal-grating-stabilization
Broad area (BA) diode lasers with narrow, temperature-stable spectral lines are required for pumping narrow spectral lines in solid state lasers and for dense spectral multiplexing in direct…
Progress in increasing the maximum achievable output power of broad area diode lasers
/forschung/publikationen/progress-in-increasing-the-maximum-achievable-output-power-of-broad-area-diode-lasers
High power broad area diode lasers provide the optical energy for all high performance laser systems, either directly or as pump sources for solid-state lasers. Continuous improvement is required in…
Compact sources for the generation of high-peak power wavelengthstabilized laser pulses in the picoseconds and nanoseconds ranges
/forschung/publikationen/compact-sources-for-the-generation-of-high-peak-power-wavelength-stabilized-laser-pulses-in-the-picoseconds-and-nanoseconds-ranges
Diode lasers are ideally suited for the generation of optical pulses in the nanoseconds and picoseconds ranges by gainswitching, Q-switching or mode-locking. We have developed diode-laser based light…
All semiconductor high power fs laser system with variable repetition rate
/forschung/publikationen/all-semiconductor-high-power-fs-laser-system-with-variable-repetition-rate
Laser diodes offer an interesting alternative to commercially available light sources for the generation of ultrashort pulses. They have the unique feature that they can be directly electrically…