Noise Modeling of GaN HEMT Devices
M. Rudolph1, R. Doerner2, E. Ngnintendem1, and W. Heinrich2
Published in:
7th European Microwave Integrated Circuits Conf. (EuMIC 2012), Amsterdam, The Netherlands, Oct. 28 - Nov. 2, pp. 159-162 (2012).
Abstract:
GaN HEMT technology is increasingly used not only for power applications, but also for low-noise amplification. However, systematic assessment of the validity of common noise models like the Pucel and Pospieszalski approaches are rarely found in the literature. This paper aims at closing this gap by validating the two model approaches for different devices and bias points.
1 Brandenburg University of Technology, Ulrich L. Rohde Chair of RF and Microwave Techniques, Siemens-Halske-Ring 14, 03046 Cottbus, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Keywords:
MODFETs, noise, semiconductor device modeling, semiconductor device noise modeling.
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