Topography of (2021) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy
S. Plocha, T. Wernickea, J. Thalmairb, M. Lohrb, M. Pristovseka, J. Zweckb, M. Weyersc, M. Kneissla,c
Published in:
J. Cryst. Growth, vol. 356, no. 1, pp. 70-74 (2012).
Abstract:
The growth of AlGaN, GaN and InGaN layers on (2021) GaN substrates was investigated by metal- organic vapor phase epitaxy. All layers exhibit undulations along [1014] with a period length between 20 nm and 45 nm. Under certain growth conditions, GaN exhibits bunching of the undulations leading to an increase of the undulation period and amplitude. This is also observed in the ternary alloys InGaN and AlGaN. Strong impact of the growth temperature and reactor pressure on the surface roughness and photoluminescence properties is found for GaN layers, with the smoothest layers obtained at low growth temperatures and low reactorp ressures. Atomic scale interpretation suggests that the undulations originate from (1010) and (1011) microfacets.
a Technische Universität Berlin, Institute of Solid State Physics, Hardenbergstrasse 36, D-10623 Berlin, Germany
b Universität Regensburg,Institut für Experimentelle und Angewandte Physik, Universitätsstrasse 31, D-93040 Regensburg, Germany
c Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Keywords:
A1. Crystal morphology, A3. Metal-organic vapor phase epitaxy, B1. Nitrides, B2. Semiconducting gallium compounds.
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