Spacer and well pumping of InGaN vertical cavity semiconductor lasers with varying number of quantum wells
R. Debusmann1, U. Brauch2,3, V. Hoffmann4, M. Weyers4, and M. Kneissl1,4
Published in:
J. Appl. Phys., vol. 112, no. 033110 (2012).
Abstract:
We have investigated the dependence of the threshold pump power and slope efficiency of 415nm (In)GaN vertical cavity surface emitting lasers on the wavelength of the pump source and the number of quantum wells. InGaN double quantum well resonant-periodic-gain structures with 6, 8, and 10 periods have been compared. By barrier and well pumping of the samples with a 375nm dye laser, a nearly 10 times reduction of the laser threshold was observed compared to pumping with a 337nm nitrogen laser source. The laser threshold was found to be independent of the number of quantum wells. The slope efficiency seems to be not affected by the pump wavelength and resonant-periodicgain periods. The results are discussed with a rate equation model that takes into account the inhomogeneous pumping of the quantum wells and optical thickness variations in the resonantperiodic- gain structure.
1 Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
2 Institut für Strahlwerkzeuge, Universität Stuttgart, Pfaffenwaldring 43, 70569 Stuttgart, Germany
3 Stuttgart Research Center of Photonic Engineering (SCoPE), Universität Stuttgart, Pfaffenwaldring 9, 70569 Stuttgart, Germany
4 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
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