Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device
T. Kruczek1, R. Leyman1, D. Carnegie1, N. Bazieva1, G. Erbert2, S. Schulz3, C. Reardon3, and E.U. Rafailov1
Published in:
Appl. Phys. Lett., vol. 101, no. 081114 (2012).
Abstract:
Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals’ difference frequency ≈1 THz.
1 Photonics and Nanoscience Group, School of Engineering, Physics and Mathematics, University of Dundee, Dundee DD1 4HN, United Kingdom
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
3 School of Physics and Astronomy, University of St. Andrews, St. Andrews, Fife KY16 9SS, United Kingdom
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