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Suchergebnisse 4201 bis 4210 von 5282

Graphene mode-locked femtosecond Yb:KLuW laser

/forschung/publikationen/graphene-mode-locked-femtosecond-ybkluw-laser

Large-area monolayer graphene, synthesized by chemical vapor deposition, was transferred to a 1-in. quartz substrate. The high-quality monolayer graphene has been subject to characterization of the…

Efficient concept for generation of diffraction-limited green light by sum-frequency generation of spectrally combined tapered diode lasers

/forschung/publikationen/efficient-concept-for-generation-of-diffraction-limited-green-light-by-sum-frequency-generation-of-spectrally-combined-tapered-diode-lasers

In order to increase the power of visible diode laser systems in an efficient manner, we propose spectral beam combining with subsequent sum-frequency generation. We show that this approach, in…

Indium incorporation efficiency and critical layer thickness of (2021) InGaN layers on GaN

/forschung/publikationen/indium-incorporation-efficiency-and-critical-layer-thickness-of-2021-ingan-layers-on-gan

In this study, the indium incorporation efficiency and critical layer thickness for misfit dislocation formation of thick (2021) oriented InGaN layers were investigated. InGaN layers with an indium…

High power laser pulses with voltage controlled durations of 400 - 1000 ps

/forschung/publikationen/high-power-laser-pulses-with-voltage-controlled-durations-of-400-1000nbspps

We report on the generation and amplification of pulses with pulse widths of 400 - 1000 ps at 1064 nm. For pulse generation an ultra-fast semiconductor modulator is used that modulates a…

Integrated Microwave Atmospheric Plasma Source (IMAPlaS): thermal and spectroscopic properties and antimicrobial effect on B. atrophaeus spores

/forschung/publikationen/integrated-microwave-atmospheric-plasma-source-imaplas-thermal-and-spectroscopic-properties-and-antimicrobial-effect-on-b-atrophaeus-spores

The Integrated Microwave Atmospheric Plasma Source (IMAPlaS) operating with a microwave resonator at 2.45 GHz driven by a solid-state transistor oscillator generates a core plasma of high…

Efficiency-optimized monolithic frequency stabilization of high-power diode lasers

/forschung/publikationen/efficiency-optimized-monolithic-frequency-stabilization-of-high-power-diode-lasers

High-power GaAs-based diode lasers produce optical energy with extremely high efficiencies, but their spectrum is too broad for many applications (4-5 nm with 95% power content). Narrow spectra…

Reliability studies on GaN HEMTs with sputtered Iridium gate module

/forschung/publikationen/reliability-studies-on-gan-hemts-with-sputtered-iridium-gate-module

A new gate module with Iridium as a degradation resistant Schottky contact is developed. The technology for GaN based HEMT devices comprises sputtering of low stress Iridium contacts and subtractive…

Tapered Diode Lasers and Laser Modules near 635nm with Efficient Fiber Coupling for Flying-Spot Display Applications

/forschung/publikationen/tapered-diode-lasers-and-laser-modules-near-635nm-with-efficient-fiber-coupling-for-flying-spot-display-applications

Flying-spot displays require light sources in the red, green and blue with a high optical output power and nearly diffraction limited beams. In this paper we present experimental results of…

Watt-Class Green-Emitting Laser Modules Using Direct Second Harmonic Generation of Diode Laser Radiation

/forschung/publikationen/watt-class-green-emitting-laser-modules-using-direct-second-harmonic-generation-of-diode-laser-radiation

Large-area high-resolution displays, using a flying-spot to create the picture, require light sources in the red, green and blue wavelength range with a high optical output power and nearly…

Impact of light polarization on photoluminescence intensity and quantum efficiency in AlGaN and AlInGaN layers

/forschung/publikationen/impact-of-light-polarization-on-photoluminescence-intensity-and-quantum-efficiency-in-algan-and-alingan-layers

We analyzed emission intensity, quantum efficiency, and emitted light polarization of c-plane AlGaN and AlInGaN layers (λ=320-350 nm) by temperature dependent photoluminescence. Low indium…