Suche
Regeln für die Suche
- Nur Wörter mit 2 oder mehr Zeichen werden akzeptiert
- Maximal 200 Zeichen insgesamt
- Leerzeichen werden zur Trennung von Worten verwendet, "" kann für die Suche nach ganzen Zeichenfolgen benutzt werden (keine Indexsuche)
- UND, ODER und NICHT sind Suchoperatoren, die den standardmäßigen Operator überschreiben. +/|/- entspricht UND, ODER und NICHT als Operatoren
- Alle Suchwörter werden zu Kleinschreibung konvertiert
1060 nm ridge waveguide lasers based on extremely wide waveguides for 1.3 W continuous-wave emission into a single mode with FWHM divergence angle of 9° × 6°
/forschung/publikationen/1060-nm-ridge-waveguide-lasers-based-on-extremely-wide-waveguides-for-13nbspw-continuous-wave-emission-into-a-single-mode-with-fwhm-divergence-angle-of-9nbspxnbsp6
Extremely large epitaxial waveguides with thickness tWG = 8.6 µm enable diode lasers with very narrow vertical divergence angle. We demonstrate that when such designs are processed in…
High Power Diode Lasers Optimized for Low Loss Smile-insensitive External Spectral Stabilization
/forschung/publikationen/high-power-diode-lasers-optimized-for-low-loss-smile-insensitive-external-spectral-stabilization
High powers can be produced within narrow spectral widths by stabilizing diode lasers with external volume holographic gratings, but this typically introduces additional optical losses. We compare…
Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking
/forschung/publikationen/fast-switching-gan-based-lateral-power-schottky-barrier-diodes-with-low-onset-voltage-and-strong-reverse-blocking
GaN-based heterostructure lateral Schottky barrier diodes (SBDs) grown on n-SiC substrate are investigated in this letter. These SBDs own very low onset voltage VF = 0.43 V, high…
Effect of ridge waveguide etch depth on laser threshold of InGaN MQW laser diodes
/forschung/publikationen/effect-of-ridge-waveguide-etch-depth-on-laser-threshold-of-ingan-mqw-laser-diodes
The laser threshold and lateral mode confinement of blue (440 nm) InGaN multiple quantum well (MQW) laser diodes have been investigated. Ridge-waveguide (RW) laser diodes with different ridge…
Auger effect in nonpolar quantum wells
/forschung/publikationen/auger-effect-in-nonpolar-quantum-wells
Optical polarization properties of nonpolar quantum wells and their efficiency droop at high charge carrier densities are discussed. Therefore, a photoluminescence experiment connecting both…
Polarization of eigenmodes and the effect on the anisotropic gain in laser structures on nonpolar and semipolar GaN
/forschung/publikationen/polarization-of-eigenmodes-and-the-effect-on-the-anisotropic-gain-in-laser-structures-on-nonpolar-and-semipolar-gan
The resonator orientation of InGaN-based lasers on semipolar planes influences the optical polarization and the gain. We present gain measurements of semipolar (1122) laser structures with…
Red Tunable High-Power Narrow-Spectrum External-Cavity Diode Laser Based on Tapered Amplifier
/forschung/publikationen/red-tunable-high-power-narrow-spectrum-external-cavity-diode-laser-based-on-tapered-amplifier
About this book: With the explosion of information traffic, the role of optics becomes very significant to fulfill the demand of super fast computing and data processing and the role of optical…
A 900 MHz Voltage-Mode Class-S Power Amplifier
/forschung/publikationen/a-900-mhz-voltage-mode-class-s-power-amplifier
This paper presents a class-S power amplifier with voltage-mode class-D topology for the 900 MHz band. The design is based on a GaN-HEMT MMIC and realized as a hybrid module. For a typical…
W-Band Amplifier with 8 dB Gain Based on InPHBT Transferred-Substrate Technology
/forschung/publikationen/w-band-amplifier-with-8-db-gain-based-on-inphbt-transferred-substrate-technology
In this paper, the design and characterization of a single-stage amplifier based on InP/InGaAs/InP double heterojunction bipolar transistors (DHBT) in transferred - substrate technology is reported.…
A Modular Hybrid Switching Amplifier for Wide-Bandwidth Supply-Modulated RF Power Amplifiers
/forschung/publikationen/a-modular-hybrid-switching-amplifier-for-wide-bandwidth-supply-modulated-rf-power-amplifiers
A modular hybrid switching amplifier (HSA) for wide-bandwidth supply modulation of RF power amplifiers is presented. The HSA is designed for maximum 15 V supply voltage, 1 A supply current…