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Diagnosing and addressing the limitations to lateral far field angle in high power broad-area diode lasers
/forschung/publikationen/diagnosing-and-addressing-the-limitations-to-lateral-far-field-angle-in-high-power-broad-area-diode-lasers
We show experimentally that thermal lensing largely determines the lateral mode properties of broad-area lasers. However, additional broadening is observed at high powers, which will limit how…
High-Power Distributed Feedback Lasers With Surface Gratings
/forschung/publikationen/high-power-distributed-feedback-lasers-with-surface-gratings
We present the results for high-power broad-area distributed feedback lasers with surface gratings of 80th, 135th, and 270th Bragg orders. A maximum output power of 11 W for a laser with 80th…
Off-state breakdown and dispersion optimization in AlGaN/GaN heterojunction field-effect transistors utilizing carbon doped buffer
/forschung/publikationen/off-state-breakdown-and-dispersion-optimization-in-algangan-heterojunction-field-effect-transistors-utilizing-carbon-doped-buffer
An example of GaN buffer structure optimization in AlGaN/GaN heterojunction field-effect transistors is demonstrated. Transistors fabricated on four epitaxial structures with buffer consisting of…
Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors
/forschung/publikationen/random-telegraph-signal-noise-in-gate-current-of-unstressed-and-reverse-bias-stressed-algangan-high-electron-mobility-transistors
Random telegraph signal (RTS) fluctuations with relative amplitude up to 50% are observed in forward and reverse gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility…
Experimental and theoretical study of finite-aperture tapered unstable resonator lasers
/forschung/publikationen/experimental-and-theoretical-study-of-finite-aperture-tapered-unstable-resonator-lasers
We present experimental and theoretical results of a novel finite-aperture tapered unstable resonator laser under pulsed and CW operations. At a current of 16 A an output power of about…
Catastrophic optical bulk damage in InP 7xx emitting quantum dot diode lasers
/forschung/publikationen/catastrophic-optical-bulk-damage-in-inp-7xx-emitting-quantum-dot-diode-lasers
Catastrophic optical bulk damage occurs in broad-area MOCVD-grown InP/(Al)GaInP 7xx emitting quantum dot diode lasers operated at high power with single, high-current pulses of 5-20 A, in…
Topography of (2021) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy
/forschung/publikationen/topography-of-2021-algan-gan-and-ingan-layers-grown-by-metal-organic-vapor-phase-epitaxy
The growth of AlGaN, GaN and InGaN layers on (2021) GaN substrates was investigated by metal- organic vapor phase epitaxy. All layers exhibit undulations along [1014] with a period length between…
HVPE of AlxGa1-xN layers on planar and trench patterned sapphire
/forschung/publikationen/hvpe-of-alxga1-xn-layers-on-planar-and-trench-patterned-sapphire
The growth of Al0.45Ga0.55N layers of 5 mm thickness on planar and trench patterned (0001) sapphire substrates by hydride vapour phase epitaxy (HVPE) is investigated. The introduction of an AlN…
Analysis of doping induced wafer bow during GaN:Si growth on sapphire
/forschung/publikationen/analysis-of-doping-induced-wafer-bow-during-gansi-growth-on-sapphire
In-situ curvature measurements were employed to quantify stress generation during metalorganic vapor phase epitaxy growth of Si-doped GaN sandwiched between undoped GaN layers. It is shown that the…
Spacer and well pumping of InGaN vertical cavity semiconductor lasers with varying number of quantum wells
/forschung/publikationen/spacer-and-well-pumping-of-ingan-vertical-cavity-semiconductor-lasers-with-varying-number-of-quantum-wells
We have investigated the dependence of the threshold pump power and slope efficiency of 415nm (In)GaN vertical cavity surface emitting lasers on the wavelength of the pump source and the number of…