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180 GHz Frequency Doubler in Transferred-Substrate InP HBT Technology with 4 dBm Output Power
/forschung/publikationen/180-ghz-frequency-doubler-in-transferred-substrate-inp-hbt-technology-with-4-dbm-output-power
A single-ended frequency doubler in transferredsubstrate (TS) InP-DHBT technology is presented with state-ofthe- art results. A maximum output power of 4 dBm and 9.6 dB conversion loss at…
Tapered Diode Pumped Continuous Wave Alexandrite Laser
/forschung/publikationen/tapered-diode-pumped-continuous-wave-alexandrite-laser
We describe a low-cost and efficient Alexandrite (Cr:BeAl2O4) laser that is pumped by a high-brightness tapered diode laser. The tapered diode provides up to 1.1 W of output power and its…
Advances in High Power Semiconductor Lasers
/forschung/publikationen/advances-in-high-power-semiconductor-lasers
We review high power semiconductor laser development at the Ferdinand-Braun-Institut, focusing on studies to improve material quality, design development for peak performance in standard structures…
Progress in efficiency-optimized high-power diode lasers
/forschung/publikationen/progress-in-efficiency-optimized-high-power-diode-lasers
High-power diode lasers are highly efficient sources of optical energy for industrial and defense applications, either directly or as pump sources for solid state or fiber lasers. We review here how…
High-Brilliance Diode Lasers with Monolithically-Integrated Surface Gratings as Sources for Spectral Beam Combining
/forschung/publikationen/high-brilliance-diode-lasers-with-monolithically-integrated-surface-gratings-as-sources-for-spectral-beam-combining
A high output power and a good beam quality are required for the application of diode lasers for direct material processing. One possible way to increase the output power while keeping the beam…
Normally-off GaN Transistors for Power Switching Applications
/forschung/publikationen/normally-off-gan-transistors-for-power-switching-applications
Normally-off high voltage GaN-HFETs for switching applications are presented. Normally-off operation with threshold voltages of more than 1 V and 6 V gate swing has been obtained by using…
GaN-based power HEMTs: Parasitic, Reliability and high field issues
/forschung/publikationen/gan-based-power-hemts-parasitic-reliability-and-high-field-issues
This paper reviews the main mechanisms responsible for trapping and breakdown in power HEMTs based on gallium nitride. With regard to the trapping mechanisms, we describe the role of carbon and iron…
UV Laser Processing for Semiconductor Devices
/forschung/publikationen/uv-laser-processing-for-semiconductor-devices
The application of reliable laser sources is well-established in several fields of industry including automotive, electronics, and medical manufacturing on macro, micro, and even nanometer scales…
High Data Rate Modulation of High Power 1060-nm DBR Tapered Lasers With Separate Contacts
/forschung/publikationen/high-data-rate-modulation-of-high-power-1060-nm-dbr-tapered-lasers-with-separate-contacts
Direct optical modulation at 2.5 Gb/s with amplitude of more than 0.5 W has been demonstrated in single longitudinal mode distributed Bragg reflector tapered lasers emitting at 1060 nm…
Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications
/forschung/publikationen/statistics-and-localisation-of-vertical-breakdown-in-algangan-hemts-on-sic-and-si-substrates-for-power-applications
We analyse vertical breakdown signatures in normally-off and normally-on AlGaN/GaN HEMTs on Si and SiC substrate for power applications. The probability distribution function of the breakdown voltage…