Suche

Regeln für die Suche

  • Nur Wörter mit 2 oder mehr Zeichen werden akzeptiert
  • Maximal 200 Zeichen insgesamt
  • Leerzeichen werden zur Trennung von Worten verwendet, "" kann für die Suche nach ganzen Zeichenfolgen benutzt werden (keine Indexsuche)
  • UND, ODER und NICHT sind Suchoperatoren, die den standardmäßigen Operator überschreiben. +/|/- entspricht UND, ODER und NICHT als Operatoren
  • Alle Suchwörter werden zu Kleinschreibung konvertiert
Suchergebnisse 4151 bis 4160 von 5280

Software Optimization of a Supply Modulated GaN-Amplifier for Baseband Access ET Systems

/forschung/publikationen/software-optimization-of-a-supply-modulated-gan-amplifier-for-baseband-access-et-systems

A simulation based design procedure for supply modulated amplifiers is presented. With the developed designguide optimum transistor operation under supply modulation can be simulated with arbitrary…

Numerical simulation of the amplification of picosecond laser pulses in tapered semiconductor amplifiers and comparison with experimental results

/forschung/publikationen/numerical-simulation-of-the-amplification-of-picosecond-laser-pulses-in-tapered-semiconductor-amplifiers-and-comparison-with-experimental-results

We apply a traveling wave model to the simulation of the amplification of laser pulses generated by Q-switched or mode-locked distributed-Bragg reflector lasers. The power amplifier monolithically…

96 mW longitudinal single mode red-emitting distributed Bragg reflector ridge waveguide laser with tenth order surface gratings

/forschung/publikationen/96-mw-longitudinal-single-mode-red-emitting-distributed-bragg-reflector-ridge-waveguide-laser-with-tenth-order-surface-gratings

Red-emitting ridge waveguide lasers with integrated tenth order surface distributed Bragg reflector gratings were developed. The grating was implemented by the use of a BCl3-Ar-plasma, while the…

High Power, High Efficiency Monolithic Edge-Emitting GaAs-Based Lasers with Narrow Spectral Widths

/forschung/publikationen/high-power-high-efficiency-monolithic-edge-emitting-gaas-based-lasers-with-narrow-spectral-widths

GaAs-based edge-emitting diode lasers in the 600-1100 nm range efficiently deliver high-optical powers with long lifetimes and are in wide commercial use. However, if no special measures are taken,…

In situ etched gratings embedded in AlGaAs for efficient high power 970nm distributed feedback broad-area lasers

/forschung/publikationen/in-situ-etched-gratings-embedded-in-algaas-for-efficient-high-power-970nm-distributed-feedback-broad-area-lasers

We report optical nanostructuring technology, developed for distributed feedback gratings, broadly useable for many applications. The nanostructure is pre-structured into aluminum-free layers on top…

High peak power optical pulses generated with a monolithic master-oscillator power amplifier

/forschung/publikationen/high-peak-power-optical-pulses-generated-with-a-monolithic-master-oscillator-power-amplifier

We present results on a monolithic semiconductor-based master-oscillator power amplifier (MOPA) combining a distributed-feedback (DFB) laser and a tapered amplifier on a single chip. The MOPA reaches…

Microstructure analysis of novel ternary NiSi2-xAlx silicide layers on Si(001) formed by solid-state reaction

/forschung/publikationen/microstructure-analysis-of-novel-ternary-nisi2-xalx-silicide-layers-on-si001-formed-by-solid-state-reaction

Phase formation due to annealing of Al/Ni (z:1) films on Si was investigated on the nanometer scale as a function of Al content and annealing temperature. An addition of Al to the Ni-Si system…

Growth of GaN boules via vertical HVPE

/forschung/publikationen/growth-of-gan-boules-via-vertical-hvpe

GaN boules were grown up to thicknesses of 6.3 mm via vertical HVPE on 2 in. GaN/sapphire templates. The usable boule length is limited by surface defects. Two different sub-surface…

Investigation of inversion domain formation in AlN grown on sapphire by MOVPE

/forschung/publikationen/investigation-of-inversion-domain-formation-in-aln-grown-on-sapphire-by-movpe

For certain growth conditions pronounced roughening has been observed for AlN layers grown on c-plane sapphire by metal-organic vapour phase epitaxy. TEM investigations revealed inversion domains…

Harmonically and fundamentally mode-locked InGaAs-AlGaAs disk laser generating pulse repetition rates in the 100 GHz or pulse durations in the 100 fs range

/forschung/publikationen/harmonically-and-fundamentally-mode-locked-ingaas-algaas-disk-laser-generating-pulse-repetition-rates-in-the-100nbspghz-or-pulse-durations-in-the-100nbspfs-range

Femtosecond mode-locked semiconductor disk lasers (SDLs) have the potential to replace rather complex, expensive laser systems and to establish ultrashort-pulse applications outside of scientific…