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Origin of a-plane (Al,Ga)N formation on patterned c-plane AlN/sapphire templates
/forschung/publikationen/origin-of-a-plane-algan-formation-on-patterned-c-plane-alnsapphire-templates
a-plane (Al,Ga)N layers can be grown on patterned c-plane AlN/sapphire templates with a ridge direction along [1100]Al2O3. Scanning nanobeam diffraction reveals that the formation of a-plane layers…
Evaluation of 600V GaN and SiC Schottky Diodes at Different Temperatures
/forschung/publikationen/evaluation-of-600v-gan-and-sic-schottky-diodes-at-different-temperatures
This paper presents a newly developed 600V/2A Gallium Nitride (GaN) Schottky diode feasible for high frequency operation. Static and dynamic characteristics of the diode are experimentally evaluated…
Sensitivity Analysis of S-Parameter Measurements Due to Calibration Standards Uncertainty
/forschung/publikationen/sensitivity-analysis-of-s-parameter-measurements-due-to-calibration-standards-uncertainty
A new method for the sensitivity analysis of -parameter measurements due to the uncertainty of the calibration standards is presented. It is a fully analytic, straightforward calculation and can be…
RF Probe Technology: History and Selected Topics
/forschung/publikationen/rf-probe-technology-history-and-selected-topics
Today, radio-frequency (RF) wafer probes play an important role in almost every step of the RF products lifecycle: from technology development, model parameter extraction, design verification, and…
A +32.8 dBm LDMOS power amplifier for WLAN in 65 nm CMOS technology
/forschung/publikationen/a-328-dbm-ldmos-power-amplifier-for-wlan-in-65-nm-cmos-technology
Generating high output power at radio frequencies in CMOS becomes more challenging as technology is scaled. Limitations mainly come from device design. We demonstrate the feasibility of an 10 V…
Towards a Large-Signal Noise Model for GaN HEMT Devices
/forschung/publikationen/towards-a-large-signal-noise-model-for-gan-hemt-devices
This paper proposes a bias-dependent description of the HEMT noise sources that is optimized with respect to implementation in large-signal compact models. The noise is described as a function of…
Optical Pulse Generation in Photonic Band Crystal Mode Locked Lasers
/forschung/publikationen/optical-pulse-generation-in-photonic-band-crystal-mode-locked-lasers
We report for the first time on the generation of short optical pulses based on passive mode locking of photonic band crystal lasers. Preliminary results demonstrate the feasibility and…
Degradation processes in high-power laser diodes under external optical feedback
/forschung/publikationen/degradation-processes-in-high-power-laser-diodes-under-external-optical-feedback
The effect of moderate external feedback on the gradual degradation of 808 nm emitting AlGaAs-based high-power broad-area diode lasers is analyzed. Eventually the quantum well that actually…
Techniques towards GaN power transistors with improved high voltage dynamic switching properties
/forschung/publikationen/techniques-towards-gan-power-transistors-with-improved-high-voltage-dynamic-switching-properties
Dynamic switching limitations of GaN power devices are analyzed and techniques towards improving fast high voltage switching are proposed and verified experimentally with an emphasis on optimized…
Growth and Optical Properties of GaN-Based Non- and Semipolar LEDs
/forschung/publikationen/growth-and-optical-properties-of-gan-based-non-and-semipolar-leds-1
Light emitting diodes (LEDs) based on the (In,Al,Ga)N material system offer the possibility to generate light in the entire visible wavelength range, extending into the ultraviolet and the infrared…