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A 164 GHz Hetero-Integrated Source in InP-on-BiCMOS Technology
/forschung/publikationen/a-164-ghz-hetero-integrated-source-in-inp-on-bicmos-technology
A 164 GHz source in a hetero-integrated semiconductor technology is presented. It features a fundamental frequency voltage-controlled oscillator in BiCMOS, which is used to drive a…
Modeling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications
/forschung/publikationen/modeling-of-inp-hbts-in-transferred-substrate-technology-for-millimeter-wave-applications
In this paper, the modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. At first, a direct parameter extraction methodology dedicated to…
Design of 200 W Wideband Doherty Amplifier with 34 % Bandwidth
/forschung/publikationen/design-of-200-w-wideband-doherty-amplifier-with-34-bandwidth
This paper presents the design and implementation of a 200 W wideband harmonically-tuned Doherty amplifier. The power amplifier (PA) is targeted for wide range base stations operating within the…
Parasitic Effects and Measurement Uncertainties in Multi-Layer Thin-Film Structures
/forschung/publikationen/parasitic-effects-and-measurement-uncertainties-in-multi-layer-thin-film-structures
On-wafer measurements of multi-layer thin-film components in the mm-wave frequency range may involve uncertainties and parasitic effects due to adjacent structures on the wafer. Starting from a…
A GaN Voltage-Mode Class-D MMIC with Improved Overall Efficiency for Future RRH Applications
/forschung/publikationen/a-gan-voltage-mode-class-d-mmic-with-improved-overall-efficiency-for-future-rrh-applications
This paper reports on a compact voltage-mode class-D power amplifier module suitable for the LTE frequency band of 800 MHz. It includes a 3-stage GaN MMIC and a hybrid lumped-element output filter…
GaN-HEMTs as Switches for High-Power Wideband Supply Modulators
/forschung/publikationen/gan-hemts-as-switches-for-high-power-wideband-supply-modulators
A highly efficient GaN-HEMT based supply modulator suitable for envelope tracking (ET) systems is designed and analyzed. Varying the transistor size in the power switching stage reveals the critical…
Bandwidth versus Efficiency Performance using Power Combining in GaN HEMT Power Amplifiers
/forschung/publikationen/bandwidth-versus-efficiency-performance-using-power-combining-in-gan-hemt-power-amplifiers
Transistors manufacturers are increasing the output power of their devices presently by enlarging the gate width of the transistors. This work discusses the tradeoff between the increased parasitic…
Compact High-Power GaN Oscillator with 2.45 GHz Differential Output
/forschung/publikationen/compact-high-power-gan-oscillator-with-245-ghz-differential-output
This paper describes a very small 2.45 GHz high power oscillator with differential outputs. A pair of GaN HEMTs delivers 42 W of output power at 39 % efficiency. Easy load matching is…
Thick-Film Barium-Strontium-Titantate Varactors for RF Power Transistors
/forschung/publikationen/thick-film-barium-strontium-titantate-varactors-for-rf-power-transistors
This work addresses the properties of Barium- Strontium-Titanate based thick-film varactors at conditions that are expected to arise when the varactors are integrated in a packaged RF power…
Load-Modulated GaN Power Amplifier Implementing Tunable Thick Film BST Components
/forschung/publikationen/load-modulated-gan-power-amplifier-implementing-tunable-thick-film-bst-components
In this work, a novel adaptive broadband power amplifier (PA) design based on barium-strontium-titanate (BST) components for dynamic load modulation (DLM) is presented. The designed PA, driven in…