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Auger effect in nonpolar quantum wells
/forschung/publikationen/auger-effect-in-nonpolar-quantum-wells
Optical polarization properties of nonpolar quantum wells and their efficiency droop at high charge carrier densities are discussed. Therefore, a photoluminescence experiment connecting both…
Polarization of eigenmodes and the effect on the anisotropic gain in laser structures on nonpolar and semipolar GaN
/forschung/publikationen/polarization-of-eigenmodes-and-the-effect-on-the-anisotropic-gain-in-laser-structures-on-nonpolar-and-semipolar-gan
The resonator orientation of InGaN-based lasers on semipolar planes influences the optical polarization and the gain. We present gain measurements of semipolar (1122) laser structures with…
Red Tunable High-Power Narrow-Spectrum External-Cavity Diode Laser Based on Tapered Amplifier
/forschung/publikationen/red-tunable-high-power-narrow-spectrum-external-cavity-diode-laser-based-on-tapered-amplifier
About this book: With the explosion of information traffic, the role of optics becomes very significant to fulfill the demand of super fast computing and data processing and the role of optical…
A 900 MHz Voltage-Mode Class-S Power Amplifier
/forschung/publikationen/a-900-mhz-voltage-mode-class-s-power-amplifier
This paper presents a class-S power amplifier with voltage-mode class-D topology for the 900 MHz band. The design is based on a GaN-HEMT MMIC and realized as a hybrid module. For a typical…
W-Band Amplifier with 8 dB Gain Based on InPHBT Transferred-Substrate Technology
/forschung/publikationen/w-band-amplifier-with-8-db-gain-based-on-inphbt-transferred-substrate-technology
In this paper, the design and characterization of a single-stage amplifier based on InP/InGaAs/InP double heterojunction bipolar transistors (DHBT) in transferred - substrate technology is reported.…
A Modular Hybrid Switching Amplifier for Wide-Bandwidth Supply-Modulated RF Power Amplifiers
/forschung/publikationen/a-modular-hybrid-switching-amplifier-for-wide-bandwidth-supply-modulated-rf-power-amplifiers
A modular hybrid switching amplifier (HSA) for wide-bandwidth supply modulation of RF power amplifiers is presented. The HSA is designed for maximum 15 V supply voltage, 1 A supply current…
An Analysis of Source Connections in GaN Power Transistor Packages
/forschung/publikationen/an-analysis-of-source-connections-in-gan-power-transistor-packages
This paper presents an analysis of different variations to contact the source of GaN power transistors in a package. Two variants relying on bondwires, and three variations using source vias are…
A Low Voltage 24 GHz VCO in 130nm CMOS For Localisation Purposes in Sensor Networks
/forschung/publikationen/a-low-voltage-24nbspghz-vco-in-130nm-cmos-for-localisation-purposes-in-sensor-networks
A low-voltage CMOS cross-coupled voltage controlled oscillator (VCO) in 130nm IBM-CMOS process is presented. Due to system considerations, tuning voltage is centered around 1V. The VCO delivers…
A High-Gain X-Band GaN-MMIC Power Amplifier
/forschung/publikationen/a-high-gain-x-band-gan-mmic-power-amplifier
In this paper, a high-gain X-band MMIC power amplifier is presented. The amplifier is based on 0.25µm-gate GaN HEMTs and realized as coplanar circuit using the 4-inch process line at FBH. The circuit…
On Parasitic Coupling in CPW Structures
/forschung/publikationen/on-parasitic-coupling-in-cpw-structures
Parasitic coupling mechanisms in CPW line systems are investigated. This is important for open and short reflect standards in calibration, for instance. Simulation results are presented varying the…