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High-power, spectrally stabilized, near-diffraction-limited 970 nm laser light source based on truncated-tapered semiconductor optical amplifiers with low confinement factors
/forschung/publikationen/high-power-spectrally-stabilized-near-diffraction-limited-970nbspnm-laser-light-source-based-on-truncated-tapered-semiconductor-optical-amplifiers-with-low-confinement-factors
High-power spectrally single-moded coherent emission with high beam quality is demonstrated using a master-oscillator (MO) power-amplifier (PA) system. The MO is a single-moded distributed Bragg…
Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells
/forschung/publikationen/indium-incorporation-and-emission-wavelength-of-polar-nonpolar-and-semipolar-ingan-quantum-wells
InGaN quantum wells were grown by metal organic vapor-phase epitaxy on polar (0 0 0 1), nonpolar (1 0 1 0) and on semipolar (1 0 1 2), (1 1 2 2), (1 0 1 1) as well as (2 0 2 1) oriented GaN…
Application of 940 nm high-power DFB lasers for line-broadening measurements at normal pressure using a robust and compact setup
/forschung/publikationen/application-of-940-nm-high-power-dfb-lasers-for-line-broadening-measurements-at-normal-pressure-using-a-robust-and-compact-setup
High-power distributed-feedback (DFB) lasers for the wavelength range near 940 nm (i.e. about 10,600 cm-1) were used for line-broadening measurements of individual rotational-vibrational absorption…
Reliable Operation for 14 500 h of a Wavelength-Stabilized Diode Laser System on a Microoptical Bench at 671 nm
/forschung/publikationen/reliable-operation-for-14nbsp500nbsph-of-a-wavelength-stabilized-diode-laser-system-on-a-microoptical-bench-at-671nbspnm
Reliability tests for wavelength-stabilized compact diode laser systems emitting at 671 nm are presented. The devices were mounted on microoptical benches with the dimensions of…
Femtosecond diode-pumped solid-state laser with a repetition rate of 4.8 GHz
/forschung/publikationen/femtosecond-diode-pumped-solid-state-laser-with-a-repetition-rate-of-48-ghz
We report on a diode-pumped Yb:KGW (ytterbium-doped potassium gadolinium tungstate) laser with a repetition rate of 4.8 GHz and a pulse duration of 396 fs. Stable fundamental modelocking is…
Experimental and theoretical analysis of the dominant lateral waveguiding mechanism in 975 nm high power broad area diode lasers
/forschung/publikationen/experimental-and-theoretical-analysis-of-the-dominant-lateral-waveguiding-mechanism-in-975-nm-high-power-broad-area-diode-lasers
For maximum fibre-coupled power, high power broad area diode lasers must operate with small lateral far field angles at high continuous wave (CW) powers. However, these structures are laterally…
1060 nm ridge waveguide lasers based on extremely wide waveguides for 1.3 W continuous-wave emission into a single mode with FWHM divergence angle of 9° × 6°
/forschung/publikationen/1060-nm-ridge-waveguide-lasers-based-on-extremely-wide-waveguides-for-13nbspw-continuous-wave-emission-into-a-single-mode-with-fwhm-divergence-angle-of-9nbspxnbsp6
Extremely large epitaxial waveguides with thickness tWG = 8.6 µm enable diode lasers with very narrow vertical divergence angle. We demonstrate that when such designs are processed in…
High Power Diode Lasers Optimized for Low Loss Smile-insensitive External Spectral Stabilization
/forschung/publikationen/high-power-diode-lasers-optimized-for-low-loss-smile-insensitive-external-spectral-stabilization
High powers can be produced within narrow spectral widths by stabilizing diode lasers with external volume holographic gratings, but this typically introduces additional optical losses. We compare…
Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking
/forschung/publikationen/fast-switching-gan-based-lateral-power-schottky-barrier-diodes-with-low-onset-voltage-and-strong-reverse-blocking
GaN-based heterostructure lateral Schottky barrier diodes (SBDs) grown on n-SiC substrate are investigated in this letter. These SBDs own very low onset voltage VF = 0.43 V, high…
Effect of ridge waveguide etch depth on laser threshold of InGaN MQW laser diodes
/forschung/publikationen/effect-of-ridge-waveguide-etch-depth-on-laser-threshold-of-ingan-mqw-laser-diodes
The laser threshold and lateral mode confinement of blue (440 nm) InGaN multiple quantum well (MQW) laser diodes have been investigated. Ridge-waveguide (RW) laser diodes with different ridge…