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Epitaxial-Side Mounting of Terahertz Quantum-Cascade Lasers for Improved Heat Management
/forschung/publikationen/epitaxial-side-mounting-of-terahertz-quantum-cascade-lasers-for-improved-heat-management
First results on epitaxial-side (epi-down) mounting of terahertz quantum-cascade lasers (QCLs) on sapphire submounts using indium solder are presented. The single-plasmon ridge waveguide lasers emit…
Index antiguiding in narrow ridge-waveguide (In,Al)GaN-based laser diodes
/forschung/publikationen/index-antiguiding-in-narrow-ridge-waveguide-inalgan-based-laser-diodes
The threshold current density of narrow (1.5 µm) ridge waveguide (In,Al)GaN based laser diodes is found to strongly depend on the ridge etch depth. By solving the complex-value two-dimensional…
Monolithic 626 nm single-mode AlGaInP DBR diode laser
/forschung/publikationen/monolithic-626-nm-single-mode-algainp-dbr-diode-laser
Single-mode lasers below 630 nm are still realized using complex laser systems. We present distributed Bragg reflector (DBR) ridge waveguide lasers (RWL) based on AlGaInP. When packaged into sealed…
InP-Si BiCMOS Heterointegration Using a Substrate Transfer Process
/forschung/publikationen/inp-si-bicmos-heterointegration-using-a-substrate-transfer-process
Broadband transmitters for radio links in the mm-wave range are key building blocks for future wireless communication systems. In this work such components are to be realized by means of an InPon-…
Structural and optical properties of semipolar (1122) AlGaN grown on (1010) sapphire by metal-organic vapor phase epitaxy
/forschung/publikationen/structural-and-optical-properties-of-semipolar-1122-algan-grown-on-1010-sapphire-by-metal-organic-vapor-phase-epitaxy
We report on the growth of semipolar (1122) AlGaN in the entire composition range on (1010) sapphire by metal-organic vapor phase epitaxy. Growth rates increase linearly with the metal-organic supply…
Improved Vertical Isolation for Normally-Off High Voltage GaN-HFETs on n-SiC Substrates
/forschung/publikationen/improved-vertical-isolation-for-normally-off-high-voltage-gan-hfets-on-n-sic-substrates
Argon implantation of n-type SiC substrates prior to epitaxial growth of AlGaN/GaN HFETs stacks is used to decrease the vertical leakage to the conductive substrate. Normally-off p-GaN gate…
High Brightness, Narrow Bandwidth DBR Diode Lasers at 1120 nm
/forschung/publikationen/high-brightness-narrow-bandwidth-dbr-diode-lasers-at-1120nbspnm
In this letter, we report on monolithic distributed Bragg reflector ridge waveguide diode lasers. The lasers feature highly strained InGaAs quantum wells and fifth order surface gratings for a…
High-Efficiency Low-Voltage 24GHz VCO in 130nm CMOS for FMCW Radar Applications
/forschung/publikationen/high-efficiency-low-voltage-24ghz-vco-in-130nm-cmos-for-fmcw-radar-applications
A high-efficiency CMOS voltage controlled oscillator (VCO) with cross-coupled topology in 130nm IBMCMOS process is presented. The VCO delivers 4dBm output power, with 13% tuning range. It offers both…
Enabling GaN High Speed Devices: Microwave Meets Power Electronics - and vice versa
/forschung/publikationen/enabling-gan-high-speed-devices-microwave-meets-power-electronics-and-vice-versa
GaN devices are getting highly mature in the field of microwave electronics covering power applications at frequencies ranging from a few 100 MHz to almost 100 GHz. This success is due to…
Bow-Tie-Antenna-Coupled Terahertz Detectors using AlGaN/GaN Field-Effect Transistors with 0.25 Micrometer Gate Length
/forschung/publikationen/bow-tie-antenna-coupled-terahertz-detectors-using-algangan-field-effect-transistors-with-025-micrometer-gate-length
We report on the design and characterization of terahertz detection devices using field-effect transistors and on-chip broadband antennas. Experimental results from measurements on…