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Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces
/forschung/publikationen/electrical-properties-and-microstructure-of-vanadium-based-contacts-on-icp-plasma-etched-n-type-algansi-and-gansi-surfaces
Light-emitting diodes emitting in the UV-B spectral range usually contain an n-type AlxGa1-xN contact layer with x of about 0.4 and require a low specific contact resistivity in the range of…
Breakdown and dynamic effects in GaN power switching devices
/forschung/publikationen/breakdown-and-dynamic-effects-in-gan-power-switching-devices
Approaches towards fast switching GaN devices for applications in power electronics are presented. First, an overview on breakdown mechanisms in GaN power devices is given. Suitable techniques…
Vertical Blocking Voltage Improvement of GaN HEMT Structures on n-SiC by Pre-Epitaxial Substrate Implantation
/forschung/publikationen/vertical-blocking-voltage-improvement-of-gan-hemt-structures-on-n-sic-by-pre-epitaxial-substrate-implantation
To overcome the use of expensive semi-insulating SiC substrates, we developed a method to increase the vertical blocking strength of n-SiC by argon implantation prior to the high temperature…
Comparison of catastrophic optical damage in InP/(Al)GaInP quantum dot and quantum well diode lasers
/forschung/publikationen/comparison-of-catastrophic-optical-damage-in-inpalgainp-quantum-dot-and-quantum-well-diode-lasers
The facets of InP/(Al)GaInP/GaAs quantum dot laser active regions offer superior resistance to catastrophic optical mirror damage at high facet power densities. These structures degrade by bulk…
The impact of external optical feedback on the degradation behavior of high-power diode lasers
/forschung/publikationen/the-impact-of-external-optical-feedback-on-the-degradation-behavior-of-high-power-diode-lasers
The impact of external feedback on high-power diode laser degradation is studied. For this purpose early stages of gradual degradation are prepared by accelerated aging of 808-nm-emitting…
Investigation of the temperature dependent efficiency droop in UV LEDs
/forschung/publikationen/investigation-of-the-temperature-dependent-efficiency-droop-in-uv-leds
The influence of the dislocation density and the carrier-confining potentials on the temperature dependent behavior of the external quantum efficiency (EQE) of near-ultraviolet light-emitting diodes…
Excitonic recombination in epitaxial lateral overgrown AlN on sapphire
/forschung/publikationen/excitonic-recombination-in-epitaxial-lateral-overgrown-aln-on-sapphire
Excitonic emission in heteroepitaxially grown aluminum nitride (AlN) with reduced defect density due to the epitaxial lateral overgrowth (ELO) of patterned AlN/sapphire templates has been…
Highly conductive n-AlxGa1-xN layers with aluminum mole fractions above 80%
/forschung/publikationen/highly-conductive-n-alxga1-xn-layers-with-aluminum-mole-fractions-above-80
Silicon doping of AlxGa1-xN layers with high aluminum mole fractions (0.8<x<1) was studied. The AlGaN:Si layers were pseudomorphically grown by metalorganic vapor phase epitaxy on low defect…
Suppression of Higher-Order Lateral Modes in Broad-Area Diode Lasers by Resonant Anti-Guiding
/forschung/publikationen/suppression-of-higher-order-lateral-modes-in-broad-area-diode-lasers-by-resonant-anti-guiding
For a maximum fiber-coupled power, high power broad-area diode lasers must operate with a small lateral far-field divergence at high continuous wave (CW) powers. However, these structures are…
Cathodoluminescence and TEM investigations of structural and optical properties of AlGaN on epitaxial laterally overgrown AlN/sapphire templates
/forschung/publikationen/cathodoluminescence-and-tem-investigations-of-structural-and-optical-properties-of-algan-on-epitaxial-laterally-overgrown-alnsapphire-templates
Surface steps as high as 15 nm on up to 10 µm thick AlN layers grown on patterned AlN/sapphire templates play a major role for the structural and optical properties of AlxGa1-xN layers with…