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The impact of external optical feedback on the degradation behavior of high-power diode lasers
/forschung/publikationen/the-impact-of-external-optical-feedback-on-the-degradation-behavior-of-high-power-diode-lasers
The impact of external feedback on high-power diode laser degradation is studied. For this purpose early stages of gradual degradation are prepared by accelerated aging of 808-nm-emitting…
Investigation of the temperature dependent efficiency droop in UV LEDs
/forschung/publikationen/investigation-of-the-temperature-dependent-efficiency-droop-in-uv-leds
The influence of the dislocation density and the carrier-confining potentials on the temperature dependent behavior of the external quantum efficiency (EQE) of near-ultraviolet light-emitting diodes…
Excitonic recombination in epitaxial lateral overgrown AlN on sapphire
/forschung/publikationen/excitonic-recombination-in-epitaxial-lateral-overgrown-aln-on-sapphire
Excitonic emission in heteroepitaxially grown aluminum nitride (AlN) with reduced defect density due to the epitaxial lateral overgrowth (ELO) of patterned AlN/sapphire templates has been…
Highly conductive n-AlxGa1-xN layers with aluminum mole fractions above 80%
/forschung/publikationen/highly-conductive-n-alxga1-xn-layers-with-aluminum-mole-fractions-above-80
Silicon doping of AlxGa1-xN layers with high aluminum mole fractions (0.8<x<1) was studied. The AlGaN:Si layers were pseudomorphically grown by metalorganic vapor phase epitaxy on low defect…
Suppression of Higher-Order Lateral Modes in Broad-Area Diode Lasers by Resonant Anti-Guiding
/forschung/publikationen/suppression-of-higher-order-lateral-modes-in-broad-area-diode-lasers-by-resonant-anti-guiding
For a maximum fiber-coupled power, high power broad-area diode lasers must operate with a small lateral far-field divergence at high continuous wave (CW) powers. However, these structures are…
Cathodoluminescence and TEM investigations of structural and optical properties of AlGaN on epitaxial laterally overgrown AlN/sapphire templates
/forschung/publikationen/cathodoluminescence-and-tem-investigations-of-structural-and-optical-properties-of-algan-on-epitaxial-laterally-overgrown-alnsapphire-templates
Surface steps as high as 15 nm on up to 10 µm thick AlN layers grown on patterned AlN/sapphire templates play a major role for the structural and optical properties of AlxGa1-xN layers with…
Origin of a-plane (Al,Ga)N formation on patterned c-plane AlN/sapphire templates
/forschung/publikationen/origin-of-a-plane-algan-formation-on-patterned-c-plane-alnsapphire-templates
a-plane (Al,Ga)N layers can be grown on patterned c-plane AlN/sapphire templates with a ridge direction along [1100]Al2O3. Scanning nanobeam diffraction reveals that the formation of a-plane layers…
Evaluation of 600V GaN and SiC Schottky Diodes at Different Temperatures
/forschung/publikationen/evaluation-of-600v-gan-and-sic-schottky-diodes-at-different-temperatures
This paper presents a newly developed 600V/2A Gallium Nitride (GaN) Schottky diode feasible for high frequency operation. Static and dynamic characteristics of the diode are experimentally evaluated…
Sensitivity Analysis of S-Parameter Measurements Due to Calibration Standards Uncertainty
/forschung/publikationen/sensitivity-analysis-of-s-parameter-measurements-due-to-calibration-standards-uncertainty
A new method for the sensitivity analysis of -parameter measurements due to the uncertainty of the calibration standards is presented. It is a fully analytic, straightforward calculation and can be…
RF Probe Technology: History and Selected Topics
/forschung/publikationen/rf-probe-technology-history-and-selected-topics
Today, radio-frequency (RF) wafer probes play an important role in almost every step of the RF products lifecycle: from technology development, model parameter extraction, design verification, and…