T. Jensen, T. Kraemer, V. Krozer, W. Heinrich

Published in:

Proc. 43th European Microwave Conf. (EuMC 2013), Nuremberg, Germany, Oct. 7-10, pp. 1547-1550 (2013).

Abstract:

A single-ended frequency doubler in transferredsubstrate (TS) InP-DHBT technology is presented with state-ofthe- art results. A maximum output power of 4 dBm and 9.6 dB conversion loss at 180 GHz is achieved with on-wafer measurements. An optimum conversion loss of 5.4 dB is realized with an output power of -3.4 dBm for the same frequency. The DC power consumption is 36 mW under saturated conditions. The suppression of the fundamental frequency is 11 dB. The doubler has very high output power over a broad bandwidth with 7 dBm at 160 GHz and 2.6 dBm at 220 GHz. The optimum conversion loss for the full 160-220 GHz range is better than 7 dB. The circuit utilizes a 2-finger HBT with an emitter size of 0.8 × 5 µm² and total circuit area is 0.83 µm².

Keywords:

frequency multiplier; InP double heterojunction bipolar transistor, transfer-substrate process, millimeter-wave monolithic integrated circuits.

Copyright © EuMA 2013. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the EuMA.

Full version in pdf-format.