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Narrow Linewidth of 633-nm DBR Ridge-Waveguide Lasers
/forschung/publikationen/narrow-linewidth-of-633-nm-dbr-ridge-waveguide-lasers
Compact laser sources with long coherence lengths in the visible spectral region are sought for many applications. This letter presents distributed-Bragg-reflector (DBR) ridgewaveguide (RW) lasers…
MOVPE-grown AlxGa1-xAsyP1-y strain compensating layers on GaAs
/forschung/publikationen/movpe-grown-alxga1-xasyp1-y-strain-compensating-layers-on-gaas
We demonstrate the substitution of Al0.85GaAs layers, used as claddings in edge-emitting diode lasers, with tensile strained Al0.85GaAs0.96P layers to reduce the room temperature wafer bow.…
MOVPE growth of Al0.85Ga0.15As for high power laser diodes emitting at 808 nm
/forschung/publikationen/movpe-growth-of-al085ga015as-for-high-power-laser-diodes-emitting-at-808nbspnm
Al0.85Ga0.15As cladding layers in 808 nm laser diodes grown by MOVPE result in inferior device performance when grown with the same growth parameters as the standard Al0.7Ga0.3As cladding…
In-situ etching of patterned GaAs/InGaP surfaces for highly efficient 975 nm DFB-BA diode lasers
/forschung/publikationen/in-situ-etching-of-patterned-gaasingap-surfaces-for-highly-efficient-975-nm-dfb-ba-diode-lasers
In-situ etching with CBr4 has been used to form buried Bragg gratings in AlGaAs-based broad area diode lasers with distributed feedback (DFB-BA) by pattern transfer into In0.49Ga0.51P within the…
400 µm stripe lasers for high-power fiber coupled pump modules
/forschung/publikationen/400-um-stripe-lasers-for-high-power-fiber-coupled-pump-modules
We present a 940 nm quasi-continuous wave semiconductor laser designed as a building block for high-power fiber coupled pump modules. The laser comprises a 400 µm narrow-stripe array…
Si Doping of GaN in Hydride Vapor-Phase Epitaxy
/forschung/publikationen/si-doping-of-gan-in-hydride-vapor-phase-epitaxy
Growth of GaN boules by hydride vapor-phase epitaxy (HVPE) is very attractive for fabrication of GaN substrates. Use of dichlorosilane as a source for Si doping of bulk GaN is investigated. It is…
Monolithic Y-branch dual wavelength DBR diode laser at 671 nm for Shifted Excitation Raman Difference Spectroscopy
/forschung/publikationen/monolithic-y-branch-dual-wavelength-dbr-diode-laser-at-671-nm-for-shifted-excitation-raman-difference-spectroscopy-1
In this work a monolithic Y-branch dual wavelength distributed Bragg reflector (DBR) diode laser with an emission at 671 nm for SERDS (shifted excitation Raman difference spectroscopy) is presented.…
Narrow linewidth, micro-integrated extended cavity diode laser for precision potassium atom interferometry in micro-gravity environment
/forschung/publikationen/narrow-linewidth-micro-integrated-extended-cavity-diode-laser-for-precision-potassium-atom-interferometry-in-micro-gravity-environment
Narrow linewidth, micro-integrated extended cavity diode laser for precision potassium atom interferometry in micro-gravity environment E. Luvsandamdin1, Ch. Kürbis1, A. Sahm1,…
Increasing the luminance of a red emitting laser light source by spectral beam combining
/forschung/publikationen/increasing-the-luminance-of-a-red-emitting-laser-light-source-by-spectral-beam-combining
Increasing the luminance of a red emitting laser light source by spectral beam combining G. Blume, D. Feise, A. Sahm, B. Eppich, K. Paschke Ferdinand-Braun-Institut,…
Investigation of design parameters of 633 nm diode lasers with internal surface gratings for narrow spectral linewidth
/forschung/publikationen/investigation-of-design-parameters-of-633-nm-diode-lasers-with-internal-surface-gratings-for-narrow-spectral-linewidth
Investigation of design parameters of 633 nm diode lasers with internal surface gratings for narrow spectral linewidth D. Feise1, G. Blume1, W. John1, J. Pohl1,…