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High-Brilliance Diode Lasers with Monolithically-Integrated Surface Gratings as Sources for Spectral Beam Combining
/forschung/publikationen/high-brilliance-diode-lasers-with-monolithically-integrated-surface-gratings-as-sources-for-spectral-beam-combining
A high output power and a good beam quality are required for the application of diode lasers for direct material processing. One possible way to increase the output power while keeping the beam…
Normally-off GaN Transistors for Power Switching Applications
/forschung/publikationen/normally-off-gan-transistors-for-power-switching-applications
Normally-off high voltage GaN-HFETs for switching applications are presented. Normally-off operation with threshold voltages of more than 1 V and 6 V gate swing has been obtained by using…
GaN-based power HEMTs: Parasitic, Reliability and high field issues
/forschung/publikationen/gan-based-power-hemts-parasitic-reliability-and-high-field-issues
This paper reviews the main mechanisms responsible for trapping and breakdown in power HEMTs based on gallium nitride. With regard to the trapping mechanisms, we describe the role of carbon and iron…
UV Laser Processing for Semiconductor Devices
/forschung/publikationen/uv-laser-processing-for-semiconductor-devices
The application of reliable laser sources is well-established in several fields of industry including automotive, electronics, and medical manufacturing on macro, micro, and even nanometer scales…
High Data Rate Modulation of High Power 1060-nm DBR Tapered Lasers With Separate Contacts
/forschung/publikationen/high-data-rate-modulation-of-high-power-1060-nm-dbr-tapered-lasers-with-separate-contacts
Direct optical modulation at 2.5 Gb/s with amplitude of more than 0.5 W has been demonstrated in single longitudinal mode distributed Bragg reflector tapered lasers emitting at 1060 nm…
Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications
/forschung/publikationen/statistics-and-localisation-of-vertical-breakdown-in-algangan-hemts-on-sic-and-si-substrates-for-power-applications
We analyse vertical breakdown signatures in normally-off and normally-on AlGaN/GaN HEMTs on Si and SiC substrate for power applications. The probability distribution function of the breakdown voltage…
Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces
/forschung/publikationen/electrical-properties-and-microstructure-of-vanadium-based-contacts-on-icp-plasma-etched-n-type-algansi-and-gansi-surfaces
Light-emitting diodes emitting in the UV-B spectral range usually contain an n-type AlxGa1-xN contact layer with x of about 0.4 and require a low specific contact resistivity in the range of…
Breakdown and dynamic effects in GaN power switching devices
/forschung/publikationen/breakdown-and-dynamic-effects-in-gan-power-switching-devices
Approaches towards fast switching GaN devices for applications in power electronics are presented. First, an overview on breakdown mechanisms in GaN power devices is given. Suitable techniques…
Vertical Blocking Voltage Improvement of GaN HEMT Structures on n-SiC by Pre-Epitaxial Substrate Implantation
/forschung/publikationen/vertical-blocking-voltage-improvement-of-gan-hemt-structures-on-n-sic-by-pre-epitaxial-substrate-implantation
To overcome the use of expensive semi-insulating SiC substrates, we developed a method to increase the vertical blocking strength of n-SiC by argon implantation prior to the high temperature…
Comparison of catastrophic optical damage in InP/(Al)GaInP quantum dot and quantum well diode lasers
/forschung/publikationen/comparison-of-catastrophic-optical-damage-in-inpalgainp-quantum-dot-and-quantum-well-diode-lasers
The facets of InP/(Al)GaInP/GaAs quantum dot laser active regions offer superior resistance to catastrophic optical mirror damage at high facet power densities. These structures degrade by bulk…