Advances in High Power Semiconductor Lasers
S. Knigge, P. Crump, H. Wenzel, G. Erbert, and G. Tränkle
Published in:
IEEE Photonics 2013 Conference (IPC13) Bellevue, WA, USA, Sep 8-12, pp. 466-467 (2013).
Abstract:
We review high power semiconductor laser development at the Ferdinand-Braun-Institut, focusing on studies to improve material quality, design development for peak performance in standard structures and the development of novel device concepts for new applications.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
© Copyright 2013 IEEE - All Rights Reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Full version in pdf-format.