Segregation and desorption of antimony in InP (0 0 1) in MOVPE
S. Weekea, M. Leyera, M. Pristovseka, F. Brunnerb, M. Weyersb and W. Richterc
Published in:
J. Cryst. Growth, vol. 298, pp. 159-162 (2007).
Abstract:
We investigated the segregation of Sb on InP in metalorganic vapour phase epitaxy (MOVPE). A clean PH3 stabilized InP(0 0 1) surface is exposed to trimethyl antimony (TMSb) and then immediately overgrown with InP. For a single exposure and overgrowth cycle a self-organized InPSb double-quantum well (QW) is formed, one layer is at the Sb-treated surface and the other occurs after 50-150 nm overgrowth. This behaviour was found in situ by RAS and verified ex situ by SIMS and XRD. The separation of the second QW linearly depends on the growth temperature in a range from 520 to 580 °C. At temperatures above 580 °C the separation saturates due to desorption. We propose strain-induced surface melting to explain the double quantum well QW formation.
a Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstraße 36, D-10623 Berlin, Germany
b Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
c Dipartimento di Fisica, Roma II (Tor Vergata), Via della Ricerca Scientifica 1, I-00133 Rome, Italy
Keywords:
A1. Reflectance anisotropy spectroscopy; A1. Segregation; A3. Metalorganic vapour phase epitaxy; B1. Indium antimony phosphide; B1. Indium phosphide
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