A Broadband GaN-MMIC Power Amplifier for L to X Bands
C. Meliani, R. Behtash2, J. Würfl1, W. Heinrich1 and G. Tränkle1
Published in:
European Microwave Integrated Circuits Conf. (EuMiC 2007), Munich Germany, Oct. 8-10, pp. 147-150 (2007).
Abstract:
A broadband GaN monolithic power amplifier covering the L to X bands is presented as is required for various applications in measurement set-ups and multi-band systems. It is based on 8 transistor cells with 4x50 mm gate width each following the distributed amplifier concept. The amplifier achieves 10 dB broadband small-signal gain and a 3dB cut-off frequency of 11 GHz. The circuit delivers between 1.4 and 2.2 W over the bandwidth from 2 GHz up to 10 GHz. At the maximum output power a PAE higher than 20% is achieved.
1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
2 United Monolithic Semiconductors GmbH, Wilhelm-Runge-Strasse 11, D-89081 Ulm, Germany
Copyright © EuMA 2007. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the EuMA 2007.
Full version in pdf-format.