Current Gain Collapse in HBTs Analysed by Transient Interferometric Mapping Method
S. Bychikhin1, V. Dubec1, J. Kuzmik1, J. Würfl2, P. Kurpas2, J.-P. Teyssier3, D. Pogany1
Published in:
European Microwave Integrated Circuits Conf. (EuMiC 2007), Munich Germany, Oct. 8-10, pp. 28-31 (2007).
Abstract:
Thermal distribution during a current gain collapse event is investigated in multi-finger InGaP/GaAs HBTs using the transient interferometric mapping method. The onset of the collapse is observed at time of about 1ms in devices with a low emitter ballasting resistance RE, while for HBTs with a high RE, the current is distributed equally over the fingers. 3D thermal simulation supports the results and allows an estimation of temperature at which the collapse occurs.
1 Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria
2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
3 IRCOM CNRS University of Limoges, 7 rue Jules Valles, 19100 Brive, France
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