Improved Design Methodology for a 2 GHz Class-E Hybrid Power Amplifier Using Packaged GaN-HEMTs
J. Flucke, C. Meliani, F. Schnieder, W. Heinrich
Published in:
European Microwave Conf. (EuMC 2007), Munich, Germany, Oct. 8-12, pp. 639-642 (2007).
Abstract:
This paper reports on design methodology and realization of a class-E power amplifier (PA) for 2 GHz using a packaged GaN-HEMT. The circuit achieves 36 dBm output power and 57 % PAE, with drain efficiency as high as 62 %. In addition to the large-signal simulation considerations, we discuss particularly the problem of input matching of the amplifier under class-E operation.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
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